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Pulsed Laser Annealing of Zirconia Capped, Native Oxides Free GaAs Surfaces

Published online by Cambridge University Press:  22 February 2011

D. Pribat
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, B.P. 10, 91401 Orsay Cedex, France.
L.M. Mercandalli
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, B.P. 10, 91401 Orsay Cedex, France.
M. Croset
Affiliation:
Thomson-CSF/LCR, Domaine de Corbeville, B.P. 10, 91401 Orsay Cedex, France.
J. Siejka
Affiliation:
Groupe de Physique des Solides/ENS, Tour 23, 2 Place Jussieu, 75221 Paris, France.
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Abstract

We have studied the effects of pulsed laser irradiation on silicon implanted, thermally activated , Calcia Stabilized Zirconia (CSZ) capped GaAs substrates. Reference substrates have also been irradiated in air for comparison. CSZ as a solid electrolyte has been used to chemically reduce the GaAs surface native oxides prior to irradiation while maintaining the surface stoechiometry. Our results indicate a spectacular decrease in defect density after laser irradiation of the CSZ capped-native oxide free samples, as compared to the samples irradiated in air.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

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