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Prospects for GaAs-on-Si LSI Circuits

Published online by Cambridge University Press:  28 February 2011

H. Shichijo
Texas Instruments Inc., Dallas, TX 75265.
L.T. Tran
Texas Instruments Inc., Dallas, TX 75265.
R.J. Matyi
Texas Instruments Inc., Dallas, TX 75265.
J.W. Lee
Currently with Kopin Corporation
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This paper will review some of the recent progress in GaAs-on-Si devices and circuits, and discuss the issues involved in realizing large scale ICs in GaAs-on-Si wafers. With a recent success in fabricating 1 Kbit static RAMs in GaAs-on-Si wafers, it has become apparent that this material is indeed acceptable for LSI complexity circuits. GaAs MESFETs fabricated using a standard process show an excellent threshold voltage uniformity which is comparable to that for bulk GaAs devices. GaAs bipolar devices on GaAs-on-Si have realized a gain of 25 which is the highest reported for bipolar devices in GaAs-on-Si material. Bipolar ring oscillators and 256-bit ROMs consisting of more than 100 gates have also been realized. In spite of these successes, however, there are numerous issues that need to be solved before this material becomes practical.

Research Article
Copyright © Materials Research Society 1987

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1. Shichijo, H., Lee, J.W., McLevige, W.V., and Taddiken, A.H., IEEE Elect. Device Lett. EDL–8, 121 (1987).CrossRefGoogle Scholar
2. Fischer, R.J., Chand, N., Kopp, W.F., Peng, C-K., Morkoc, H., Gleason, K.R. and Scheitlin, D., IEEE Trans. Elect. Dev. ED–33, 206 (1986).CrossRefGoogle Scholar
3. Nonaka, T., Akiyama, M., Kawarada, Y., and Kaminishi, K., Jap. J. Appl. Phys. 23, L919 (1984).CrossRefGoogle Scholar
4. McLevige, W.V., Chang, C.T.M., and Taddiken, A.H., IEEE J. Solid-State Circuits, SC–22, 262 (1987).CrossRefGoogle Scholar
5. Chang, C.T.M. and McLevige, W.V., unpublished data.Google Scholar
6. Fischer, R., Klem, J., Peng, C.K., Gedymin, J.S. and Morkoc, H., IEEE Elect. Device Lett. EDL–7, 112 (1986).CrossRefGoogle Scholar
7. Tran, L.T., Lee, J.W., Shichijo, H., and Yuan, H-T., IEEE Elect. Device Lett. EDL–8, 50 (1987).CrossRefGoogle Scholar
8. Yuan, H-T., Delaney, J.B., Shih, H-D., and Tran, L.T., IEEE ISSCC Tech. Digest, 1986, p. 74 .Google Scholar
9. Soga, T., Hattori, S., Sakai, S., Takeyasu, M., and Umeno, M., Elect. Lett. 20, 917 (1984).CrossRefGoogle Scholar
10. Lee, J.W., presented at the 1986 International Symposium on GaAs and Related Compounds, Las Vegas, 1986 (unpublished).Google Scholar
11. Chand, N., People, R., Baiocchi, F.A., Wecht, K.W., and Cho, A.Y., Appl. Phys. lett. 49, 815 (1986).CrossRefGoogle Scholar
12. Lee, J.W., Shichijo, H., Tsai, H.L., and Matyi, R.J., Appl. Phys. Lett. 50, 31 (1987).CrossRefGoogle Scholar
13. Lee, J.W., Tran, L.T., Tsai, H-L., and Shichijo, H., presented at the 7th Molecular Beam Epitaxy Workshop, Cambridge, MA, 1986 (unpublished).Google Scholar
14. Choi, H.K., Turner, G.W., Windhorn, W.H., and Tsaur, B-Y., IEEE Elect. Dev. Lett. EDL–7, 500 (1986).CrossRefGoogle Scholar
15. Ducourant, T., Binet, M., Baelde, J-C., Rocher, C., and Gibereau, J-M., GaAs IC Symposium Tech. Digest, p.209, 1986.Google Scholar