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Properties of Ion Beam Synthesized Iron Disilicide Dots
Published online by Cambridge University Press: 10 February 2011
Semiconducting iron silicide dots with dimensions ranging between 5 and 100 nm can be obtained by ion implantation on Si wafers and exhibit interesting photo- and electro- luminescent properties.
In our study we use structural and optical characterization as well as theoretical modelling in order to: i) discriminate among intrinsic effects of FeSi2 dots and effects due to lattice damage and Si matrix; ii) identify the range of physical parameters (size, phase, electronic structure) corresponding to the luminescent dots.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 287
- Copyright © Materials Research Society 2000