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The Properties of a-SiC:H and a-SiGe:H Films Deposited by 55 kHz PECVD

Published online by Cambridge University Press:  15 February 2011

B.G. Budaguan
Affiliation:
Institute of Electronic Technology, Moscow 103498 RUSSIA, budaguan@ms.miee.ru
A.A. Sherchenkov
Affiliation:
Institute of Electronic Technology, Moscow 103498, RUSSIA
A.E. Berdnikov
Affiliation:
Institute of Microelectronics of Russian Academy of Science, Yaroslavl 150007, RUSSIA
J.W. Metselaar
Affiliation:
University of Technology, Mekelweg 4, 2628 CDDelft, NETHERLANDS
A.A. Aivazov
Affiliation:
UniSil Corp. 401 National Av, Mountain View, CA, 94043
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Abstract

The deposition processes and the properties of a-SiC:H and a-SiGe:H films in 55 kHz glow discharge were investigated. The analysis of deposition rate and RBS measurements showed that the chemical reactions between SiHn spices and CH4 control the incorporation of C in a-SiC:H films. High deposition rates of a-SiC:H and a-SiGe:H films fabricated by 55 kHz PECVD is caused by the increase of radical fluxes to the growth surface. The specific features of a-SiC:H and a-SiGe:H microstructure were revealed by IR and AFM analysis. In a-SiC:H films the islands of low size were distinguished on the surfaces of large islands. The large variation of the total hydrogen content in a-SiGe:H did not affect the optical bandgap, while the hydrogen related microstructure controlled the electronic properties such as dark conductivity, 11p.r product, defect density and Urbach slope.

The results of optoelectronic properties and SW effect measurements of 55 kHz a-SiC:H and a-SiGe:H films demonstrated the increased stability in comparison with a-Si:H.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Budaguan, B.G., Aivazov, A.A., Sazonov, A. Yu, Popov, A. A., and Berdnikov, A. E., Mat. Res. Soc. Symp. Proc. 467, p. 585 (1997).Google Scholar
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