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Progress on Preferential Etching and Phosphorus Doping of Single Crystal Diamond

Published online by Cambridge University Press:  18 July 2014

Timothy A. Grotjohn
Affiliation:
Electrical and Computer Engineering, Michigan State University, East Lansing, MI, USA 48824 Fraunhofer Center for Coatings and Laser Applications, East Lansing MI, USA 48824
Dzung T. Tran
Affiliation:
Electrical and Computer Engineering, Michigan State University, East Lansing, MI, USA 48824
M. Kagan Yaran
Affiliation:
Fraunhofer Center for Coatings and Laser Applications, East Lansing MI, USA 48824
Thomas Schuelke
Affiliation:
Fraunhofer Center for Coatings and Laser Applications, East Lansing MI, USA 48824
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Abstract

Phosphorus is incorporated into single crystal diamond during epitaxial growth at higher concentrations on the (111) crystallographic surface than on the (001) crystallographic surface. To form n+-type regions in diamond for semiconductor devices it is beneficial to deposit on the (111) surface. However, diamond deposition is faster and of higher quality on the (001) surface. A preferential etch method is described that forms inverted pyramids on the (001) surface of a substrate diamond crystal, which opens (111) faces for improved phosphorus incorporation. The preferential etching occurs on the surface in regions where a nickel film is deposited. The etching is performed in a microwave generated hydrogen plasma operating at 160 Torr with the substrate temperature in the range of 800-950 °C. The epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm-3 is performed using a microwave plasma-assisted chemical vapor deposition process. Successful growth conditions were achieved with a feedgas mixture of 0.25% methane, 500 ppm phosphine and hydrogen at a pressure of 160 Torr and a substrate temperature of 950-1000°C. The room temperature resistivity of the phosphorus-doped diamond is 120-150 Ω-cm and the activation energy is 0.027 eV.

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Articles
Copyright
Copyright © Materials Research Society 2014 

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