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Profiling electric fields around dislocations in GaN
Published online by Cambridge University Press: 21 March 2011
Abstract
Electron holography has been used to measure the electric potential around edge and screw dislocations in n-GaN viewed in a near end-on geometry. It is shown that the potential at edge dislocations is 2V below that in the bulk consistent with a negative charge of 2 electrons/c (c = 0.52nm). Preliminary results, which suggest that screw dislocations are also negatively charged, are discussed.
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- Copyright © Materials Research Society 2002