Hostname: page-component-cc8bf7c57-qfg88 Total loading time: 0 Render date: 2024-12-11T09:54:25.412Z Has data issue: false hasContentIssue false

Probing Effects of Etching Plasmas on the Properties of PorousLow-k Dielectrics

Published online by Cambridge University Press:  17 March 2011

L. Wang
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
J. Liu
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
W.D. Wang
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
D.Z. Chi
Affiliation:
Institute of Materials Research & Engineering, 3 Research Link, Singapore 117602
D. W. Gidley
Affiliation:
Department of Physics, University of Michigan, Ann Arbor, Michigan 48109
A. F. Yee
Affiliation:
Department of Chemical Engineering & Materials Science, University of California, Irvine, CA 92697-2800
Get access

Abstract

The application of porous low-k interlayer dielectrics is needed forreducing the parasitical capacitance, especially at 65-nm node and beyond.The understanding of process-induced modifications to material properties iscrucial for a successful integration of these low-k dielectrics. The dryetching processes of porous low-k materials are important modules in ULSIfabrication. In this study, the interaction between MSQ-based JSR LKD-5109films (shown by PALS to have interconnected 2.8 nm size pores) with CF4/O2 plasma has been investigated. Various ratios of O2 content were designed to characterize its effects on theetch rate, formation of polymerization layer, and properties of the LKD-5109film. Composition analysis was conducted by SIMS and FTIR. Moistureabsorption and fluorine diffusion into low-k films after etch process areobserved, along with carbon depletion near the surface region. The influenceof etching chemistries on the morphological characteristics of thin Tabarrier layers (8-nm in thickness) deposited on etched low-k films werefurther investigated by SEM, and it is found that oxygen concentration hassignificant influences on the morphological characteristics of thin Tabarriers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fayolle, M., Passemard, G., Louveau, O., Fusalba, F., Cluzel, J., Microelectronic Engg., 70, 255 (2003)CrossRefGoogle Scholar
2.International Technology Roadmap for Semiconductors 2003.Google Scholar
3. Ryan, E. Todd, Martin, Jeremy, Junker, Kurt, Wetzel, Jeff, Gidley, David W., Sun, Jianing, J. Mater. Res., 16, 3335 (2001)Google Scholar
4. Kondoh, E., Baklanov, M.R., Bender, H., and Max, K.. Electro-chem. Solid-State Lett. 1, 224 (1998).CrossRefGoogle Scholar
5. Da Zhang, Mark Kushner, J., J. Vac. Sci. Technol. A 19, 524 (2001)CrossRefGoogle Scholar
6. Rueger, N. R., Beulens, J. J., Schaepkens, M., Doemling, M. F., Mirza, J. M., Standaert, T. E. F. M., and Oehrlein, G. S., J. Vac. Sci. Technol. A 15, 1881 (1997)CrossRefGoogle Scholar
7. Miyata, K., Hori, M., and Goto, T., J. Vac. Sci. Technol. A 14, 2083 (1996)CrossRefGoogle Scholar
8. Ernur, D., Iacopi, F., Carbonell, L., Struyf, Herbert, Max, K., Microelectronic Engg. 70, 285 (2003)Google Scholar
9. Yang, G.R., Zhao, Y.P., Wang, B., Barnat, E., McDonald, J., and Lu, T.M., Appl. Phys. Lett. 72, 1846 (1998)Google Scholar
10. Nah, J.W., Choi, W.S., Hwang, S.K., and Lee, C.M., Surf. Coat. Technol. 123, 1 (2000)CrossRefGoogle Scholar
11. Hara, T., Sakamoto, K., Togoh, F., Yang, H., and Evans, D.R., Jpn. J. Appl. Phys., Part 2, 39, L506 (2000)CrossRefGoogle Scholar
12. Iacopi, F., Tokei, Zs., Le, Q.T., Shamiryan, D., Conard, T., Brijs, B., Kreissig, U., Hove, M. Van, and Max, K., J. Appl. Phys. 92, 1548 (2002)Google Scholar
13. Gerstenberg, K.W. and Grischke, M., J. Appl. Phys. 69, 736 (1991)CrossRefGoogle Scholar