No CrossRef data available.
Published online by Cambridge University Press: 17 March 2011
The application of porous low-k interlayer dielectrics is needed forreducing the parasitical capacitance, especially at 65-nm node and beyond.The understanding of process-induced modifications to material properties iscrucial for a successful integration of these low-k dielectrics. The dryetching processes of porous low-k materials are important modules in ULSIfabrication. In this study, the interaction between MSQ-based JSR LKD-5109films (shown by PALS to have interconnected 2.8 nm size pores) with CF4/O2 plasma has been investigated. Various ratios of O2 content were designed to characterize its effects on theetch rate, formation of polymerization layer, and properties of the LKD-5109film. Composition analysis was conducted by SIMS and FTIR. Moistureabsorption and fluorine diffusion into low-k films after etch process areobserved, along with carbon depletion near the surface region. The influenceof etching chemistries on the morphological characteristics of thin Tabarrier layers (8-nm in thickness) deposited on etched low-k films werefurther investigated by SEM, and it is found that oxygen concentration hassignificant influences on the morphological characteristics of thin Tabarriers.