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Pressure Dependence on the Electrical Properties of SiO2 Gate Oxide Formed by Inductive Coupled Plasma Oxidation

Published online by Cambridge University Press:  15 July 2011

Beom-jong Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Dong-chan Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Yoon-jae Kim.
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Han-jin Lim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Ju-eun Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Wook-yeol Yi
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Dae-hyun Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Bong-hyun Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Young-wan Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Sung-ho Kang
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Yung-seok Kim
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Woo-jun Lee
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Seok-woo Nam
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
Chil-hee Chung
Affiliation:
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd San#16, Banwol-Dong, Hwasung-City, Gyeonggi-Do, Korea, 445-701
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Abstract

We investigated the pressure dependence of the inductive coupled plasma (ICP) oxidation on the electrical characteristics of the thin oxide films. Activation energies and electron temperatures with different pressures were estimated. To demonstrate the pressure effect on the plasma oxide quality, simple N type metal-oxide-semiconductor (NMOS) transistors were fabricated and investigated in a few electrical properties. At higher pressure than 200mTorr, plasma oxide has a slightly higher on-current and a lower interfacial trap density. The on-current gain seems to be related to the field mobility increase and the lower defective interface to the electron temperature during oxidation.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

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