Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-25T05:44:20.555Z Has data issue: false hasContentIssue false

Preparations and Characterizations of Epitaxial SrBi2Ta2O9 Thin Films

Published online by Cambridge University Press:  21 March 2011

Keisuke Saito
Affiliation:
Application Laboratory, Philips Japan Ltd. 7-35-1 Sagamiono, Sagamihara 228-0803, Japan
Masatoshi Mitsuya
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institute of Technology 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Toshimasa Suzuki
Affiliation:
Taiyo Yuden Co., Ltd., 5607-2 Nakamuroda, Haruna-machi, Gumma 370-3347, Japan
Yuji Nishi
Affiliation:
Taiyo Yuden Co., Ltd., 5607-2 Nakamuroda, Haruna-machi, Gumma 370-3347, Japan
Masayuki Fujimoto
Affiliation:
Taiyo Yuden Co., Ltd., 5607-2 Nakamuroda, Haruna-machi, Gumma 370-3347, Japan
Masanori Nukaga
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institute of Technology 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Isao Yamaji
Affiliation:
Application Laboratory, Philips Japan Ltd. 7-35-1 Sagamiono, Sagamihara 228-0803, Japan
Takao Akai
Affiliation:
Application Laboratory, Philips Japan Ltd. 7-35-1 Sagamiono, Sagamihara 228-0803, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institute of Technology 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan
Get access

Abstract

Epitaxial (001)-, (116)- and pseudo (103)-oriented Sr0.35Bi2.2Ta2O9 (SBT (0.35/2.2/2.0)) films were successfully grown on (001), (110) and (111) SrTiO3 substrates, respectively. High-resolution X-ray diffraction reciprocal space mapping (HRXRD-RSM) measurements and pole figure measurements clearly indicated that the (116)-oriented SBT (0.35/2.2/2.0) film consisted of two growth domains those c-axis are separated 180° apart in in-plane and pseudo (103)-oriented SBT film consisted of three growth domains those c-axis are separated 120° apart in in-plane. Moreover, lattice parameter measurements indicated that SBT films grew in fully relaxed state.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Araujo, C., Cuchiaro, J. D., MacMillan, L. D., Scott, M. C. and Scott, J. F., Nature 374, 627 (1995).Google Scholar
2. Rae, A. D., Thompson, J. D. and Withers, R. L., Acta Crystallogr. B48, 418 (1992).Google Scholar
3. Shimakawa, Y., Kubo, Y., Nakagawa, Y., Kamiyama, T., Asano, H. and Izumi, F., Appl. Phys. Lett. 74, 1904 (1999).Google Scholar
4.The lattice parameters and the space group of SBT crystal are, a=0.5531, b=0.5535, c=2.4984 nm and A21am.Google Scholar
5. Eshita, T., Yamawaki, H., Miyagaki, S. and Arimoto, Y., Integ. Ferroelectrics, 26, 103 (1999).10.1080/10584589908215615Google Scholar
6. Saito, K., Mitsuya, M., Nukaga, N., Yamaji, I., Akai, T. and Funakubo, H., Jpn. J. Appl. Phys. 39, 5489 (2000).10.1143/JJAP.39.5489Google Scholar
7. Ishikawa, K. and Funakubo, H., Appl. Phys. Lett. 75, 1970 (1999).Google Scholar
8. Fewster, P., J. Appl. Crystallogr. 24, 178 (1991).Google Scholar
9. Suzuki, T., Nishi, Y., Fujimoto, M., Ishikawa, K. and Funakubo, H., Jpn. J. Appl. Phys. 38, 1261 (1999).Google Scholar
10. Roytburd, A. L., Alpay, S. P., Bendersky, L. A., Nagarajan, V. and Ramesh, R., J. Appl. Phys. 89, 553 (2001).Google Scholar