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Preparation of Lateral Organic Spin-valve Devices with La0.7Sr0.3MnO3

Published online by Cambridge University Press:  01 February 2011

Tomonori Ikegami
Affiliation:
ikegami@molectronics.jp, Osaka University, materials physics, Machikaneyamamati,1-3, Toyonaka, N/A, Japan
Iwao Kawayama
Affiliation:
kawayama@ile.osaka-u.ac.jp, Osaka University, Suita, N/A, Japan
Masayoshi Tonouchi
Affiliation:
tonouchi@ile.osaka-u.ac.jp, Osaka University, Suita, N/A, Japan
Yoshiro Yamashita
Affiliation:
yoshiro@echem.titech.ac.jp, Tokyo Institutes of Technology, Yokohama, N/A, Japan
Hirokazu Tada
Affiliation:
tada@mp.es.osaka-u.ac.jp, Osaka University, Toyonaka, N/A, Japan
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Abstract

Spin injection and transport characteristics of low-molecular-weight organic semiconductors such as pentacene and bis(l,2,5-thiadiazolo)-p-quinobis(l,3-dithiole) (BTQBT) have been studied utilizing lateral type spin-valve devices with half metal electrodes, LaA0.67Sr0.33MnO3 (LSMO). The LSMO electrodes with a spacing of 200 nm were prepared by electron-beam lithography and dry etching of the epitaxial films grown on MgO substrates. The devices showed clear spin-valve behaviors with a magneto-resistance (MR) ratio up to 29 % at 9.1K. It was found that the MR ratio depended on the crystallinity of organic films as well as on temperature and applied bias voltages

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

1. Naber, W. J. M., Faez, S., Wiel, W. G. van der, J. Phys. D: Appl. Phys. 40, R205–R228 (2007).10.1088/0022-3727/40/12/R01CrossRefGoogle Scholar
2. Xiong, Z. H., Wu, D., Vardeny, Z. V., Shi, J., Nature 427, 821824 (2004).10.1038/nature02325CrossRefGoogle Scholar
3. Wang, F. J., Yang, C. G., Vardeny, Z. V., Phys. Rev. B 75, 245324 (2007).10.1103/PhysRevB.75.245324CrossRefGoogle Scholar
4. Majumdar, S., Laiho, R., Laukkanen, P., Väyrynen, I. J., Majumdar, H. S., Österbacka, R., Appl. Phys. Lett. 89, 122114 (2006).10.1063/1.2356463CrossRefGoogle Scholar
5. Xu, W., Szulczewski, G. J., Leclair, P., Navarrete, I., Schad, R., Miao, G., Guo, H., Gupta, A, Appl. Phys. Lett. 90, 072506 (2007).CrossRefGoogle Scholar
6. Dediu, V., Murgia, M., Matacotta, F. C., Taliani, C., Barbanera, S., Solid State Commun. 122, 181184 (2002).10.1016/S0038-1098(02)00090-XCrossRefGoogle Scholar
7. Tukagoshi, K., Alphenaar, B. W., Ago, H., Nature 401, 572574 (1999).10.1038/44108CrossRefGoogle Scholar
8. Sahoo, S., Kontos, T., Schonenberger, C., Surgers, C., Appl. Phys. Lett. 86, 112109 (2005).10.1063/1.1882761CrossRefGoogle Scholar
9. Hueso, L. E., Pruneda, J. M., Ferrari, V., Burnell, G., Valdes-Herrera, J. P., Simmons, B. D., Littlewood, P. B., Artacho, E., Fert, A., Mathur, N. D., Nature 445, 410413 (2007).10.1038/nature05507CrossRefGoogle Scholar
10. Tombros, N., Jozasa, C., Popinciuc, M., Jonkman, H. T., Wees, B. J. van, Nature 448, 571 (2007).10.1038/nature06037CrossRefGoogle Scholar
11. Miwa, S., Shiraishi, M., Mizuguchi, M., Shinjo, T., Suzuki, Y., Jpn. J. Appl. Phys. 45, L717719 (2006).10.1143/JJAP.45.L717CrossRefGoogle Scholar
12. Sakai, S., Yakushiji, K., Mitani, S., Takanashi, K., Naramoto, H., Avramov, P. V., Narumi, K., Lavrentiev, V., Maeda, Y., Appl. Phys. Lett. 89, 113118 (2006).10.1063/1.2354035CrossRefGoogle Scholar
13. Goyal, A., Rajeswari, M., Shreekala, R., Lofland, S. E., Bhagat, S. M., Boettcher, T., Kwon, C., Ramesh, R., Venkatesan, T., Appl. Phys. Lett. 71, 17 (1997).Google Scholar
14. Julliere, M., Phys. Lett. A 54, 225226 (1975).10.1016/0375-9601(75)90174-7CrossRefGoogle Scholar
15. Xie, S. J., Ahn, K. H., Smith, D. L., Bishop, A. R., Saxena, A. Google Scholar
16. Teresa, J. M. De, Barthelemy, A., Fert, A., Contour, J. P., Montaigne, F., Seneor, P., Science 286, 507 (1999).10.1126/science.286.5439.507CrossRefGoogle Scholar
17. Fujiwara, E., Takada, M., Yamashita, Y., Tada, H., Jpn. J. Appl. Phys. 33, L82–L84 (2005).10.1143/JJAP.44.L82CrossRefGoogle Scholar

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Preparation of Lateral Organic Spin-valve Devices with La0.7Sr0.3MnO3
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