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Preparation Of Bi4Ti3O12 Films by ECR Plasma SpuTtering

Published online by Cambridge University Press:  16 February 2011

Hiroshi Masumoto
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai 980, Japan.
Takashi Goto
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai 980, Japan.
Youichirou Masuda
Affiliation:
Hachinohe Institute of Technology, 88-1 Myo. Oobiraki, Hachinohe 031, Japan.
Akira Baba
Affiliation:
Hachinohe Institute of Technology, 88-1 Myo. Oobiraki, Hachinohe 031, Japan.
Toshio Hirai
Affiliation:
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai 980, Japan.
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Abstract

Epitaxially grown films of Bi4Ti3O12 (BIT) were prepared on the substrate of a sapphire single crystal heated at 650°C using a sintered Bi4Ti3O12 target by electron cyclotron resonance (ECR) plasma sputtering. The BIT film of the same composition with the target was obtained under the conditions of microwave power(Mp) higher than 500 W and RF power(Rp) between 300 to 700 W. Increasing Mp or Rp, the deposition rate of the film was increased and the surface of the film became rough. The film exhibiting flat surface, good crystalline orientation and stoichiometric composition was prepared at such the high rate as 3.5 Å/sec under the conditions of Mp=500W and Rp=500W. Dielectric constants(1KHz) of the films deposited on (1120), (1102) and (0001) of sapphire were 93, 121 and 90, respectively, and refractive indexes of each films for the wave length of 632 nm were 2.32, 2.38 and 2.37, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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