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Preparation and Characterization of 3C-SiC Heteroepitaxial Layers on Si(111)

Published online by Cambridge University Press:  25 February 2011

Mitsugu Yamanaka
Affiliation:
Scientific Research Laboratory, Nissan Motor Co., Ltd., 1, Natsushima-cho, Yokosuka 237, Japan
Keiko Ikoma
Affiliation:
Scientific Research Laboratory, Nissan Motor Co., Ltd., 1, Natsushima-cho, Yokosuka 237, Japan
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Abstract

3C-SiC layers were grown on Si(111) substrates by chemical vapor deposition (CVD) using SiH4-CH3CI-H2 gas mixture. 3C-SiC(111) heteroepitaxial layers were obtained with smooth surfaces and reduced warpage. All the epilayers were n- type, and the carrier density and Hall mobility were 2.1×1016∼2.8×1017 cm-3 and 120∼180 cm2/Vs at room temperature, respectively. Temperature dependences of the electrical properties of the self-supported 3C-SiC(111) epilayers were measured between 15 and 300 K for the first time. 3C-SiC(111) epilayers showed a similar temperature dependence of carrier density to 3C-SiC(001) heteroepitaxial layer. Hall mobility was maximum (∼360 cm2/Vs) around 100 K.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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Preparation and Characterization of 3C-SiC Heteroepitaxial Layers on Si(111)
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