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Porosity and its Effect on Barrier Performance of Thin Electroless Cobalt Alloy Caps

Published online by Cambridge University Press:  01 February 2011

Qingyun Chen
Affiliation:
qingyunchen@cooksonelectronics.com, Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States, 203-799-4906
Jun Liu
Affiliation:
JLiu@atmi.com, ATMI, R & D, 7 Commerce Drive, Danbury, CT, 06810, United States
Elizabeth Walker
Affiliation:
EWalker@atmi.com, ATMI, R & D, 7 Commerce Drive, Danbury, CT, 06810, United States
Richard Hurtubise
Affiliation:
RHurtubise@cooksonelectronics.com, Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States
Daniel Stritch
Affiliation:
DStritch@cooksonelectronics.com, Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States
Xuan Lin
Affiliation:
Xlin@cooksonelectronics.com, Cookson Electronics/Enthone Inc., R & D, 350 Frontage Road, West Haven, CT, 06516, United States
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Abstract

Pinhole densities of electroless cobalt alloy films on copper substrate are characterized using optical and electrochemical methods. The impact of pits or pinholes on deposit film barrier property is discussed. The improved film barrier property is shown by reduction of pits formation through deposition process optimization.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1 Kohn, A., Eizenberg, M., Shacham-Diamand, Y. et al., Materials Sci. and Eng. A302, P.18 (2001).Google Scholar
2 Singer, P., Semiconductor International, Oct. 1, 2005.Google Scholar
3 Kohn, A., Eizenberg, M., Shacham-Diamand, Y. et al., J. of Applied Physics, Vol.2, No. 9, P.5508.Google Scholar
4 Chen, Q., Valverde, C., et al., ECS Transactions Vol.2, Issue 6, p. 61 (2006).Google Scholar
5 Chen, Q., Valverde, C., et al., ECS Transactions Vol.2, Issue 6, p. 43 (2006).Google Scholar
6 Decorps, T., Haumesser, P.H., Peyne, C., et al., AMC Proc., 2004, P. 823.Google Scholar
7 Gambino, J., Wynne, J., Gill, J., et al., Microelec. Eng., vol. 83, 2006, P. 2059.Google Scholar
8 Decorps, T., Haumesser, P.H., Olivier, S., et al., Microelec. Eng., vol. 83, 2006, P. 2082.Google Scholar