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Polymer-Clay Hybrid Dielectric Layer for Flexible Organic Thin Film Transistors

Published online by Cambridge University Press:  01 February 2011

Sei Uemura
Affiliation:
sei-uemura@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Koji Suemori
Affiliation:
kouji-suemori@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Manabu Yoshida
Affiliation:
yoshida-manabu@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Satoshi Hoshino
Affiliation:
s.hoshino@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Takehito Kodzasa
Affiliation:
tak-kozasa@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
Toshihide Kamata
Affiliation:
t-kamata@aist.go.jp, National Institute of Advanced Industrial Science and Technology, Photonics Research Institute, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
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Abstract

A polymer field-effect transistor (FET) was fabricated with poly(3-hexylthophene) as an active layer and poly(methyl-methacrylate) gate dielectric modified with poly(vinyl alcohol). The influences of air atmosphere on the FET property were investigated. Under the air atmosphere, FET properties such as modulation of drain current by gate bias, leakage current and threshold voltage shift were strongly influenced by humidity. An influence was investigated by temperature dependence of FET properties. It cleared the relationship between the FET property and intrinsic mobile ion in the gate dielectric. The influence of humidity on the FET property can be prevented by insertion of a clay mineral layer, which clogs motion of ion transport in gate dielectric layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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