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Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Faruk Altan Yildirim
Affiliation:
a.yildirim@tu-harburg.de, Hamburg University of Technology, Optical and Electronic Materials, Technische Universitaet Hamburg Harburg, Eissendorfer Str. 38, Hamburg, N/A, 21073, Germany, +4940428783854, +4940428782229
Ronald Meixner
Affiliation:
ronald.meixner@hsu-hamburg.de, Helmut Schmidt University, University of the Federal Armed Forces Hamburg, Department of Electronics, Holstenhofweg 85, Hamburg, N/A, 22043, Germany
Robert Roman Schliewe
Affiliation:
schliewe@tuhh.de, Hamburg University of Technology, Institute of Optical and Electronic Materials, Eissendorfer Str. 38, Hamburg, N/A, 21073, Germany
Wolfgang Bauhofer
Affiliation:
bauhofer@tuhh.de, Hamburg University of Technology, Institute of Optical and Electronic Materials, Eissendorfer Str. 38, Hamburg, N/A, 21073, Germany
Holger Goebel
Affiliation:
holger.goebel@hsu-hamburg.de, Helmut Schmidt University, University of the Federal Armed Forces Hamburg, Department of Electronics, Holstenhofweg 85, Hamburg, N/A, 22043, Germany
Wolfgang Krautschneider
Affiliation:
krautschneider@tuhh.de, Hamburg University of Technology, Institute of Nanoelectronics, Eissendorfer Str. 38, Hamburg, N/A, 21073, Germany
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Abstract

Solution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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References

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