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Plasma Assisted Chemical Vapor Deposition of Aluminum For Metallization In Ulsi

Published online by Cambridge University Press:  15 February 2011

Dong-Chan Kim
Affiliation:
Dept. of Metall. Eng., Seoul National University, skjoo@plaza.snu.ac.krSan 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Young-Soung Kim
Affiliation:
Dept. of Metall. Eng., Seoul National University, skjoo@plaza.snu.ac.krSan 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
Seung-Ki Joo
Affiliation:
Dept. of Metall. Eng., Seoul National University, skjoo@plaza.snu.ac.krSan 56-1, Shillim-dong, Kwanak-ku, Seoul, 151-742, Korea
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Abstract

An aluminum thin film for ultra large scale integrated circuits(ULSI) metalization has been formed by PACVD using DMEAA(Dimethylethylamine alane) as a precursor. The selectivity was lost but the conformal step coverage was still maintained when the hydrogen plasma was added to conventional CVD process so that perfectly planarized metalization could be obtained.

Comparing to thermal CVD, the reflectivity as well as the resistivity could be much improved especially when the film was deposited on SiO2. The deposition rate and the resistivity of PACVD Al thin films deposited on various substrates such as Si, TiN and SiO2 were compared with those of thermal CVD Al thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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