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A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO2 Slurry

Published online by Cambridge University Press:  18 March 2011

Jong Won Lee
Affiliation:
Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24 Nongseo-Ri Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea Tel:82-2-760-6331, Fax:82-2-760-6299, E-mail:schults1@samsung.co.kr
Bo Un Yoon
Affiliation:
Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24 Nongseo-Ri Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea Tel:82-2-760-6331, Fax:82-2-760-6299, E-mail:schults1@samsung.co.kr
Sangrok Hah
Affiliation:
Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24 Nongseo-Ri Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea Tel:82-2-760-6331, Fax:82-2-760-6299, E-mail:schults1@samsung.co.kr
Joo Tae Moon
Affiliation:
Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24 Nongseo-Ri Kiheung-Eup, Yongin-Si, Kyungki-Do, Korea Tel:82-2-760-6331, Fax:82-2-760-6299, E-mail:schults1@samsung.co.kr
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Abstract

This paper attempts to establish planarization model in chemical mechanical polishing of silicon oxide using high selective ceria slurry. Though removal rate of the high area is increased due to a high pressure focused on the area with abrasive and pad, the removal rate of the same area is not increased but decreased even in the very beginning of polishing with ceria slurry. It also observed that only the elevated area is polished and dishing is not occurred during the polishing in high selective ceria CMP. In this work, it is proposed that ceria abrasives are filled in the low trench area and then support the pad as well as high area during the CMP, which results in planarization without dishing.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

[1] Boning, Duane S. & Ouma, Okumu, “Chemical Mechanical Polishing in Silicon Processing”, ISSCC Digest of Technical, pp.118124 Google Scholar
[2] Nojo, H., Kodera, M. and Nakata, R.Slurry engineering for self-stopping, dishing free SiO2-CMPIEDM 96349 Google Scholar

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