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Piezoelectric Effect on Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  01 January 1993

Masashi Kawasaki
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku Yokohama 227, Japan
Masatomo Sumiya
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku Yokohama 227, Japan
Hideomi Koinuma
Affiliation:
Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku Yokohama 227, Japan
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Abstract

As a potential method for controlling the surface reaction of plasma CVD, mechanical vibration generated by a piezoelectric device was applied on the substrate during glow discharge decomposition of SiH4. The application of 2MHz vibration dramatically improved the photoconductivity of a-Si:H films prepared at a substrate temperature of 120°C. IR and CPM spectra for the films revealed that the piezoelectric vibration remarkably modulated the amorphous network structure and reduced the defect density to 4.3x1014cm −3 which is the best among the values ever reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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Piezoelectric Effect on Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films
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