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Physicochemical Properties of Rf Magnetron Sputtered Lead Zirconate Titanate Thin Films

Published online by Cambridge University Press:  25 February 2011

E. Catitan
Affiliation:
Institut Universitaire de Technologie, Université Paris Sud (XI), Plateau du Moulon, BP 127, 91403 ORSAY CEDEX, FRANCE
B. Agius
Affiliation:
Institut Universitaire de Technologie, Université Paris Sud (XI), Plateau du Moulon, BP 127, 91403 ORSAY CEDEX, FRANCE
H. Achard
Affiliation:
LETI Département de Microélectronique 85 X, 38041 GRENOBLE CEDEX, FRANCE
J.P. Joly
Affiliation:
LETI Département de Microélectronique 85 X, 38041 GRENOBLE CEDEX, FRANCE
J.C. Cheang Wong
Affiliation:
Groupe de Physique des Solides de l'Université Paris 7 et Paris 6, Tour 23, 2 place Jussieu, 75251 PARIS CEDEX 05, France
C. Ortega
Affiliation:
Groupe de Physique des Solides de l'Université Paris 7 et Paris 6, Tour 23, 2 place Jussieu, 75251 PARIS CEDEX 05, France
J. Siejka
Affiliation:
Groupe de Physique des Solides de l'Université Paris 7 et Paris 6, Tour 23, 2 place Jussieu, 75251 PARIS CEDEX 05, France
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Abstract

Lead zirconate titanate thin films have been grown by rf magnetron sputtering an oxide target of nominal composition [Pb(Zr0.55,Ti0.45)O3 or PZT] in argon. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative and absolute cation and oxygen compositions of the thin films were determined by a new method based on the simultaneous use of Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) induced by a deuteron beam. The conditions for the deposition at room temperature of stoichiometric PZT films were established.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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