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Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors

Published online by Cambridge University Press:  18 May 2015

R. D. Schrimpf
Affiliation:
Vanderbilt University, Nashville, TN, 37212, United States.
D. M. Fleetwood
Affiliation:
Vanderbilt University, Nashville, TN, 37212, United States.
S. T. Pantelides
Affiliation:
Vanderbilt University, Nashville, TN, 37212, United States.
Y.S. Puzyrev
Affiliation:
Vanderbilt University, Nashville, TN, 37212, United States.
S. Mukherjee
Affiliation:
Vanderbilt University, Nashville, TN, 37212, United States.
R. A. Reed
Affiliation:
Vanderbilt University, Nashville, TN, 37212, United States.
J. S. Speck
Affiliation:
University of California Santa Barbara, Santa Barbara, CA, 93106, United States.
U. K. Mishra
Affiliation:
University of California Santa Barbara, Santa Barbara, CA, 93106, United States.
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Abstract

The physical mechanisms responsible for electrically-induced parametric degradation in GaN-based high electron mobility transistors are examined using a combination of experiments, device simulation, and first-principles defect analysis. A relatively simple formulation is developed under the assumption that the hot-electron scattering cross-section is independent of the electron energy. In this case, one can relate the change in defect concentration to the operational characteristics of a device, such as the spatial and energy distribution of electrons (electron temperature), electric field distribution, and electron energy loss to the lattice.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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