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Photon, Electron and Utlrasonic Emission from Nanocrystalline Porous Silicon Devices

Published online by Cambridge University Press:  11 February 2011

N. Koshida ,
B. Gelloz ,
A. Kojima ,
T. Migita ,
Y. Nakajima ,
T. Kihara ,
T. Ichihara ,
Y. Watabe  and
T. Komoda
N. Koshida
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A & T, Tokyo, Japan
B. Gelloz
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A & T, Tokyo, Japan
A. Kojima
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A & T, Tokyo, Japan
T. Migita
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A & T, Tokyo, Japan
Y. Nakajima
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A & T, Tokyo, Japan
T. Kihara
Affiliation:
Dept of Electrical and Electronic Engineering, Tokyo University of A & T, Tokyo, Japan
T. Ichihara
Affiliation:
Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd., Osaka, Japan
Y. Watabe
Affiliation:
Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd., Osaka, Japan
T. Komoda
Affiliation:
Advanced Technology Research Laboratory, Matsushita Electric Works, Ltd., Osaka, Japan
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Abstract

For quantum-sized nanocrystalline silicon (nc-Si), various optical and electronic effects have been clarified in addition to a significant band gap widening. As typical examples of these induced effects, some emission properties of nanocrystalline porous silicon (PS) are described in this paper including the present status of application studies. The first one is electroluminescence (EL) of PS diodes. It is shown that following a drastic improvement in the external quantum and power efficiencies, stability has been significantly enhanced by the formation of covalent termination nc-Si surfaces. Next topic is the cold electron emission from PS diodes. When the nanostructure of the PS drift layer is appropriately controlled, injected electrons are accelerated ballistically toward the outer surface and emitted via tunneling through a thin-film top electrode perpendicular to the device surface as energetic electrons. As an efficient surface-emitting electron source, there are many advantages in this emitter over the conventional cold cathodes. The applicability of this emitter to either vacuum-type or solid-state flat-panel display is demonstrated. Finally, the usefulness of a PS device as a thermally induced ultrasonic emitter is presented on a basis of its fundamental characterizations. Technological potential of this emitter for functional acoustic devices is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F11.5
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Koshida, N., Kojima, A., Migita, T., and Nakajima, Y., Mater. Sci. & Eng. C 19, 285 (2002).Google Scholar
2. Canham, L.T., Appl. Phys. Lett. 57 (1990) 1046.Google Scholar
3. Koshida, N. and Koyama, H., Appl. Phys. Lett. 60, 347 (1992).Google Scholar
4. Gelloz, B. and Koshida, N., J. Appl. Phys. 88, 4391 (2000).Google Scholar
5. Koshida, N., Ozaki, T., Sheng, X., and Koyama, H., Jpn. J. Appl. Phys. 34 (1995) L705.Google Scholar
6. Koshida, N., Sheng, X., and Komoda, T., Appl. Surf. Sci. 661 (1999) 371.Google Scholar
7. Sheng, X., Kojima, A., Komoda, T., and Koshida, N., J. Vac. Sci. & Technol. B 19, 64 (2001).Google Scholar
8. Komoda, T., Sheng, X., and Koshida, N., J. Vac. Sci. & Technol. B 17, 1076 (1999).Google Scholar
9. Komoda, T., Honda, Y., Ichihara, T., Hatai, T., Takegawa, Y., Watabe, Y., and Aizawa, K., Society for Information Display 2002, Boston, Int. Symp. Digest of Technical Papers 33, No.2 (SID, San Jose, 2002) pp.1128–1131.Google Scholar
10. Nakajima, Y., Kojima, A., and Koshida, N., Appl. Phys. Letters 81, 2472 (2002).Google Scholar
11. Nakajima, Y., Kojima, A., and Koshida, N., Jpn. J. Appl. Phys. 41, 2707–2709 (2002).Google Scholar
12. Shinoda, H., Nakajima, T., Ueno, K. and Koshida, N., Nature, 400, 853 (1999).Google Scholar
13. Migita, T. and Koshida, N., Jpn. J. Appl. Phys. 41, 2588–2590 (2002).Google Scholar
14. Koshida, N., Nakajima, T., Yoshiyama, M., Ueno, K., Nakagawa, T. and Shinoda, H., Mat. Res. Soc. Symp. Proc. 536, 105 (1999).Google Scholar
15. Gelloz, B., Nakagawa, T., and Koshida, N., Appl. Phys. Lett. 73, 2021 (1998).Google Scholar
16. Gelloz, B., Nakagawa, T., and Koshida, N., Mater. Res. Soc. Symp. Proc. 536, 15 (1999).Google Scholar
17. Koshida, N., Kadokura, J., Takahashi, M., and Imai, K., Mater. Res. Soc. Symp. Proc. 638, F.18.3.1 (2001).Google Scholar
18. Buriak, J.M. and Allen, M.J., J. Amer. Chem. Soc. 120, 1339 (1998).Google Scholar
19. Boukherroub, R., Morin, S., Wayner, D.D.M., and Lockwood, D.J., Phys. Stat. Sol. (a) 182, 117 (2000).Google Scholar
20. Sheng, X., Koyama, H., and Koshida, N., J. Vac. Sci. & Technol. B 16, 793 (1998).Google Scholar
21. Kojima, A. and Koshida, N., Jpn. J. Appl. Phys. 40, 366 (2001).Google Scholar
22. Ichihara, T., Honda, Y., Aizawa, K., Komoda, T., and Koshida, N., J. Cryst. Growth 237–239, 1915 (2002).Google Scholar