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Photoluminescence of CuInS2 nanowires

Published online by Cambridge University Press:  01 February 2011

Kazuki Wakita
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuencho, Sakai, Osaka 599–8531, Japan
Yoshihiro Miyoshi
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuencho, Sakai, Osaka 599–8531, Japan
Masaya Iwai
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuencho, Sakai, Osaka 599–8531, Japan
Hideto Fujibuchi
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuencho, Sakai, Osaka 599–8531, Japan
Atsushi Ashida
Affiliation:
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1–1 Gakuencho, Sakai, Osaka 599–8531, Japan
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Abstract

CuInS2 nanowires synthesized by a chemical treatment method were examined using X-ray diffraction and field emission-scanning electron microscopy (FE-SEM). The nanowires, which were identified to have a chalcopyrite structure of CuInS2, were 30–100 nm in diameter and several micrometers in length. A remarkable correlation between the color of a sample with nanowires and their FE-SEM image was disclosed. Photoluminescence spectra of the obtained nanowires were also studied. At low temperatures (∼ 10K) a broad peak centered at photon energy of 2.05 eV was observed. This energy is by 0.5 eV larger than the energy gap of the well-studied crystalline bulk samples of CuInS2. The observed rise in energy can be ascribed to quantum size effects expectedly developing in CuInS2 samples with nanosize dimensions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

1. Wakita, K., Hirooka, H., Yasuda, S., and Yamamoto, N., J. Appl. Phys. 83, 443 (1998).CrossRefGoogle Scholar
2. Wakita, K., Fujita, F., and Yamamoto, N., J. Appl. Phys. 90, 1292 (2001).CrossRefGoogle Scholar
3. Wakita, K., Nishi, K., Ohta, Y., and Nakayama, N., Appl. Phys. Lett. 80, 3316 (2002).CrossRefGoogle Scholar
4. Wakita, K., Hu, G., Nakayama, N., and Shoji, D., Jpn. J. Appl. Phys. 41, 3356 (2002).Google Scholar
5. Jiang, Y., Wu, Y., Yuan, S., Xie, B., Zhang, S., and Qian, Y., J. Mater. Res. 16, 2805 (2001).CrossRefGoogle Scholar
6. Binsma, J. J. M., Giling, L. J., and Bloem, J., J. Lumin. 27, 55 (1982).CrossRefGoogle Scholar
7. Wakita, K. et al., will be published elsewhere.Google Scholar

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