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Photoelectron Emission from the Cesiated Diamond (110) Surface

Published online by Cambridge University Press:  10 February 2011

C. A. Fox ,
M. A. Kelly ,
S. B. Hagstrom ,
R. Cao ,
G. Vergara ,
P. Pianetta ,
L. S. Pan  and
W. L. Hsu
C. A. Fox
Affiliation:
Department of Materials Science and Engineering, Stanford University
M. A. Kelly
Affiliation:
Department of Materials Science and Engineering, Stanford University
S. B. Hagstrom
Affiliation:
Department of Materials Science and Engineering, Stanford University
R. Cao
Affiliation:
Stanford Synchotron Radiation Laboratory, Stanford Linear Accelerator Center
G. Vergara
Affiliation:
Stanford Synchotron Radiation Laboratory, Stanford Linear Accelerator Center
P. Pianetta
Affiliation:
Stanford Synchotron Radiation Laboratory, Stanford Linear Accelerator Center
L. S. Pan
Affiliation:
Sandia National Laboratory, Livermore, CA
W. L. Hsu
Affiliation:
Sandia National Laboratory, Livermore, CA
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Abstract

Cesiation of type IIB diamond (110) crystals was studied using a combination of ultraviolet photoemission spectroscopy, x-ray photoemission spectroscopy, and low energy electron diffraction. The diamond (110) crystal was hydrogen treated by exposure to a hydrogen microwave discharge. Although cesium was largely unreactive with the hydrogenated diamond surface, cesiation yielded a large enhancement in the secondary electron yield of the diamond surface and the negative electron affinity (NEA) condition. An increase in the downwards band bending of approximately 0.75-0.9 eV was inferred from the shift in the valence band edge following cesiation. In addition, (lx 1) LEED patterns were observed at all cesium coverages. Exposure of the cesiated diamond surface to molecular oxygen significantly reduced the NEA peak (relative to the secondary electron background); however, recovery of the NEA peak was observed when the molecular oxygen source was removed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 449
Copyright
Copyright © Materials Research Society 1996

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References

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