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Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection

Published online by Cambridge University Press:  15 February 2011

Sheng S. Li
Affiliation:
Dept. of Electrical Engineering, University of Florida, Gainesville, FL 32611
Y. H. Wang
Affiliation:
Dept. of Electrical Engineering, University of Florida, Gainesville, FL 32611
M. Y. Chuang
Affiliation:
Dept. of Electrical Engineering, University of Florida, Gainesville, FL 32611
P. Ho
Affiliation:
Electronics Lab., General Electric Co., Syracuse, NY 13221
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Abstract

We present four new types of III-V quantum well infrared photodetectors (QWIPs) operating in photoconductive (PC) and photovoltaic (PV) modes for the wavelength range from 2 to 14 μm. These dual-mode (DM) operation QWIPs were grown by the MBE technique using GaAs/AlGaAs, AlAs/AlGaAs, and InGaAs/InAlAs material systems. Based on the bound-to-miniband (BTM) and the enhanced bound-to-continuum (BTC) intersubband transition schemes, these detectors provide the features of large absorption coefficient, low dark current, and high detectivity in the wavelength of interest, and show promising for use in large area IR focal plane array image sensor applications.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection
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Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection
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Photoconductive (PC) and Photovoltaic (PV) Dual-Mode Operation III-V Quantum well Infrared Photodetectors for 2–14 μm IR Detection
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