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Photochemical Area-Selective Etching of Si And Sio2 Using Synchrotron Radiation

Published online by Cambridge University Press:  21 February 2011

Jun-Ichi Takahashi
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243–01, Japan
Yuichi Utsumi
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243–01, Japan
Tsuneo Urisu
Affiliation:
NTT LSI Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa, 243–01, Japan
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Abstract

Photochemical etching of Si and SiO2 using synchrotron radiation (SR) is carried out. The etching rate of SiO2 is much higher than those of poly-Si and single crystal Si. The etching rate of poly-Si increases as dopant concentration decreases. These material selectivities are quite different from those for plasma- or laser-excited etching. These new phenomena in SR-stimulated etching can be explained by a reaction model that contains reaction centers that are produced by both core and binding electronic excitation of Si and fluorinated Si in the surface layers. These centers are quenched by majority carriers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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