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Phase Control and Stability of Thin Silicon Films Deposited from Silane Diluted with Hydrogen

Published online by Cambridge University Press:  01 February 2011

Gijs van Elzakker ,
Pavol Šutta ,
Frans D. Tichelaar  and
Miro Zeman
Gijs van Elzakker
Affiliation:
g.vanelzakker@dimes.tudelft.nl, Delft University of Technology, DIMES, Feldmannweg 17, Delft, 2628 CT, Netherlands
Pavol Šutta
Affiliation:
sutta@ntc.zcu.cz, West Bohemian University, NT-RC, Univerzitní 8, Plzen, 306 14, Czech Republic
Frans D. Tichelaar
Affiliation:
F.D.Tichelaar@tnw.tudelft.nl, Delft University of Technology, NCHREM, Lorentzweg 1, Delft, 2628 CJ, Netherlands
Miro Zeman
Affiliation:
m.zeman@tudelft.nl, Delft University of Technology, DIMES, Feldmannweg 17, Delft, 2628 CT, Netherlands
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Abstract

Hydrogen dilution of silane during the rf-PECVD growth of a-Si:H absorber layers is used to suppress light-induced degradation of a-Si:H solar cells. The increased stability of cells and films deposited using hydrogen dilution is verified in an accelerated degradation experiment. At higher hydrogen dilutions the early phase transition to the microcrystalline phase complicates the growth of fully amorphous films as absorbers with a sufficient thickness. In a systematic study on the influence of various deposition conditions on the material properties the pressure is identified as an important factor for controlling the structural phase evolution of the films.

Keywords

amorphousphotovoltaicstructural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A08-01
Copyright
Copyright © Materials Research Society 2007

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