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Performance Characteristics of N-Type SI-SI/GE Quantum well Infrared Photodetectors
Published online by Cambridge University Press: 15 February 2011
Abstract
The theory of multiple quantum well n-type Si-SiGe IR detectors is presented. The coefficient of photoabsorption, quantum efficiency and responsivity of Si-SiGe quantum well detector are calculated taking in consideration the effects of depolarization and electron-electron exchange interaction. We show that the Si-SiGe quantum well detectors possess lower dark current and better performance characteristics compared to GaAs-AlGaAs photodetectors.
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- Copyright © Materials Research Society 1994