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Performance Characteristics of 65nm PFETs Using Molecular Implant Species for Source and Drain Extensions

Published online by Cambridge University Press:  01 February 2011

Chung Foong Tan
Affiliation:
chungfoong@gmail.com, Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
L. W. Teo
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
C-S. Yin
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
J. G. Lee
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
J. Liu
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
A. See
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
M. S. Zhou
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
E. Quek
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
S. Chu
Affiliation:
Chartered Semiconductor Manufacturing, Technology Development, 60 Woodlands Industrial Park D, Singapore, N/A, Singapore
C. Hatem
Affiliation:
christopher,hatem@vsea.com, Varian Semiconductor Equipment Associates, Gloucester, MA, 01930, United States
N. Variam
Affiliation:
naushad.variam@vsea.com, Varian Semiconductor Equipment Associates, Gloucester, MA, 01930, United States
E. Arevalo
Affiliation:
edwin.arevalo@vsea.com, Varian Semiconductor Equipment Associates, Gloucester, MA, 01930, United States
A. Gupta
Affiliation:
Atul.gupta@vsea.com, Varian Semiconductor Equipment Associates, Gloucester, MA, 01930, United States
S. Mehta
Affiliation:
Varian Semiconductor Equipment Associates, Gloucester, MA, 01930, United States
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Abstract

We investigated the performance of 65nm pFETs whereby the source and drain extensions (SDE) were implanted with Carborane, (C2B10H12) a novel form of molecular species. The high atomic mass of this molecule (146 a.m.u.) and the number of boron atoms transported per ion enables the productivity at low energy required for manufacturing of ultra shallow junctions for advanced scaling. In this investigation, Carborane was implanted at 13 keV to produce a Boron profile near equivalent to that produced by the reference BF2 implant. Results of electrical measurements did not exhibit any compromise in the I-V characteristics in terms of Id-Vg and Id-Vd and Ion-Ioff. External resistance and Vt roll-off shifted slightly with respect to the reference devices. This is attributed to a deeper junction with Carborane due to slight offset in the profile matching. It will be shown that with fully matched profiles, a perfect match of the device characteristics can be achieved.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

[1] Gossmann, H.-J., Redinbo, G., Erokhin, Y., Romig, T., Elshot, K., Xu, J., and McComb, J., Solid State Technology, July 2007.Google Scholar
[2] Gossmann, H.-J., Proceedings of the International Workshop on Semiconductor Device Fabrication, Metrology, and Modeling (INSIGT-2007).Google Scholar
[3] Jacobson, D. et al, Nucl. Instr. & Meth. in Phys. B 237 (2005) 406410.Google Scholar
[4] Renau, A., IWJT 2007, p. 107.Google Scholar
[5] Variam, N. et al, 15th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007, p. 291.Google Scholar

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