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Peculiarities of Determination of Recombination Parameters at Moderate and High Excitation Levels in Silicon Wafers

Published online by Cambridge University Press:  26 February 2011

E. Gaubas
Affiliation:
Vilnius university, Department of Physics, Sauletekio 10, 2054 Vilnius, Lithuania
A. Kaniava
Affiliation:
Vilnius university, Department of Physics, Sauletekio 10, 2054 Vilnius, Lithuania
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Abstract

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Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

1. Luke, K.L., Cheng, L.J., J. Appl. Phys. 61, 2282 (1987).CrossRefGoogle Scholar
2. Waldmeyer, J., J. Appl. Phys. 63, 1977 (1988).CrossRefGoogle Scholar
3. Grivickas, V., Gaubas, E., Kaniava, A., et al. Lith. Journ. Phys. 32, 307 (1992).Google Scholar
4. BIakemore, J.S.. Semiconductor statistics. (Pergamon Press, 1962), Ch.8.Google Scholar
5. Ryvkin, S.M.. Photoelectric effects in semiconductors (Consultants Bureau, New York, 1964) Ch. 6.Google Scholar

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Peculiarities of Determination of Recombination Parameters at Moderate and High Excitation Levels in Silicon Wafers
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