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Peak Voltage Insensitivity to Quantum Well Width in Resonant Interband Tunneling Diodes

Published online by Cambridge University Press:  10 February 2011

H. Kitabayashi ,
T. Waho  and
Masafumi Yamamoto
H. Kitabayashi
Affiliation:
NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya Atsugi-shi, Kanagawa 243-01, Japan, hiroto@aecl.ntt.co.jp
T. Waho
Affiliation:
NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya Atsugi-shi, Kanagawa 243-01, Japan, hiroto@aecl.ntt.co.jp
Masafumi Yamamoto
Affiliation:
NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya Atsugi-shi, Kanagawa 243-01, Japan, hiroto@aecl.ntt.co.jp
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Abstract

We have investigated the peak voltage (Vp) in InAs/A1Sb/GaSb/A1Sb/InAs double-barrier resonant interband tunneling (DBRIT) diodes with various GaSb well widths (Lw). After eliminating the voltage drop resulting from parasitic resistance included in the measured peak voltage (Vpm), we found that the intrinsic peak voltage (Vpint) was almost insensitive to Lw and had a small, and virtually constant value (∼ 60 mV) at Lw, ranging from 10 to 30 monolayers. This insensitivity contrasts with the peak voltage of the conventional resonant tunneling diodes with intraband tunneling, which is sensitive to changes in Lw. This insensitivity can be explained by the fact that Vpint in Sb-based BDRIT diodes is affected by the occupied states in the collector rather than by the resonance level itself in the interband tunneling process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 225
Copyright
Copyright © Materials Research Society 1999

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