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Pattern density effects in fixed abrasive polishing

Published online by Cambridge University Press:  01 February 2011

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Abstract

We investigated pattern density effects during chemical mechanical planarization (CMP) for shallow trench isolation (STI) applications using fixed abrasive pads to better control the fixed abrasive polishing process. We observed that the polishing characteristics of higher pattern density features are strongly dependent on the presence of lower pattern density features on the same die in the wafer. This has been attributed to the aggressive action of lower pattern density features on the fixed abrasive pad which results in a more effective activation of the pad by them. Thus even the 100% pattern density features are initially polished at a very high rate when lower density features are present.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

1. Romer, Andreas, Donohue, Timothy, Gagliardi, Jon, Weimar, Frauke, Theime, Peter and Hollatz, Mark, “STI CMP using fixed abrasive - Demands, Measurement methods and Results”, CMP-MIC Conf., March 2000.Google Scholar
2. Economikos, Laertis, Jamin, Fen-Fen, Ticknor, Adam, Simpson, Alexander, “Evaluation of Fixed Abrasive Pads for STI Planarization”, CMP-MIC Conf., March 2001.Google Scholar
3.JGagliardi, ohn J., “STI polishing with 3M's fixed abrasives”, 16th Intl. VMIC Conf., September 1999.Google Scholar
4. Vo, Tuyen, Buley, Todd, Gagliardi, John J., “Improved planarization for STI with fixed abrasive technology”, Solid State Technology, June 2000.Google Scholar
5. Gagliardi, John J., Vo, Tuyen, “Total Planarizationof the MIT 961 Mask set wafers coated with HDP oxide”, CMP-MIC Conference, March 2000.Google Scholar
6. Ouma, Dennis, Lee, Brian, Boning., Duane S., “ Dielectric CMP Characterization Mask Documentation”, version 1.2 (characterization for STI), MIT, Revised May 4, 1999.Google Scholar

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