Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-16T08:10:39.771Z Has data issue: false hasContentIssue false
  • English
  • Français

Para-sexiphenyl-CdSe Nanocrystals Hybrid Light Emitting Diodes with Optimized Layer Thickness and Interfaces

Published online by Cambridge University Press:  31 January 2011

Clemens Simbrunner ,
Gerardo Hernandez-Sosa ,
Eugen Baumgartner ,
Günter Hesser ,
Jürgen Roither ,
Wolfgang Heiss  and
Helmut Sitter
Clemens Simbrunner
Affiliation:
clemens.simbrunner@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Linz, Austria
Gerardo Hernandez-Sosa
Affiliation:
gerardo.hernandezsosa@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Linz, Austria
Eugen Baumgartner
Affiliation:
eugen.baumgartner@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Linz, Austria
Günter Hesser
Affiliation:
guenter.hesser@jku.at, Johannes Kepler University Linz, Zentrum für Oberflächen und Nanoanalytik (ZONA), Linz, Austria
Jürgen Roither
Affiliation:
juergen.roither@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Linz, Austria
Wolfgang Heiss
Affiliation:
wolfgang.heiss@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Linz, Austria
Helmut Sitter
Affiliation:
helmut.sitter@jku.at, Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Linz, Austria
Get access

Abstract

CdSe/ZnS nanocrystals are embedded in para-sexiphenyl (p-6P) based hybrid light emitting diode devices providing red, green and blue (RGB) emission compatible to the HDTV color triangle. By structural and optical investigations the device parameters are optimized. The device performance is analyzed in respect to electrical and spectral response resulting in current-voltage characteristics with small leakage currents and low onset voltages. Furthermore the devices provide high color purity and stability which is demonstrated by their narrow emission line widths. All these results underline the ability of the presented device configuration to act as a future candidate for display applications.

Keywords

organicnanostructureoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1154: Symposium B – Concepts in Molecular and Organic Electronics , 2009 , 1154-B10-26
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tasch, S. Brandstätter, C., Meghdadi, F. Leising, G. Froyer, G. Althoel, L. Adv. Mat. 9 (1), 33 (1997)Google Scholar
2 Kranzelbinder, G. Meghdadi, F. Tasch, S. Leising, G. Fasoli, L. Sampietro, M. Syn. Metals 102, 1073 (1999)Google Scholar
3 Coe, S. Woo, W. Bawendi, M. Bulovic, V. Nature 420, 800 (2002)Google Scholar
4 Sun, Q. Wang, Y. Li, L. Wang, D. Zhu, T. Xu, J. Yang, C. Li, Y. Nature Photonics 1, 717 (2007)Google Scholar
5 Rizzo, A. Li, Y. Kudera, S. Sala, F. D. Zanella, M. Parak, W. J. Cingolani, R. Manna, L. and Gigli, G. Appl. Phys. Lett. 90, 051106 (2007)Google Scholar
6 Lopez-Otero, A., Thin Solid Films 3, 4 (1978).Google Scholar
7 Hernandez-Sosa, G., Simbrunner, C. Höfler, T., Moser, A. Werzer, O. Kunert, B. Trimmel, G. Kern, W. Resel, R. and Sitter, H. Org. Electronics 10, 326 (2009)Google Scholar
8 Grem, G. Martin, V. Meghdadi, F. Paar, C. Stampfl, J. Sturm, J. Tasch, S. and Leising, G. Synth. Metals 71, 2193 (1995)Google Scholar
9 Anikeeva, P. O. Madigan, C. F. Halpert, J. E. Bawendi, M. G. and Bulovic, V. Phys. Rev. B 78, 085434 (2008)Google Scholar
10 Rogach, A. L. Gaponik, N. Lupton, J. M. Bertoni, C. Gallardo, D. E. Dunn, S., Pira, N. L. Paderi, M. Repetto, P. Romanov, S. G. O'Dwyer, C., Torres, C. M. S. and Eychmüller, A., Angew. Chem. 47, 6538 (2008).Google Scholar