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Oxygen Influence on Titanium Silicide Formation

Published online by Cambridge University Press:  22 February 2011

G.G. Bentini
Affiliation:
Istituto La.M.El.-C.N.R., Via Castagnoli 1, 40126 Bologna, Italy,
M. Berti
Affiliation:
Dipartimento di Fisica, Unità G.N.S.M., Via Marzolo 8, 35131 Padova, Italy
C. Cohen
Affiliation:
Groupe de Physique des Solides de 1'E.N.S., Université Paris VII, 2 Place Jussieu, 75221 Paris, France
A.V. Drigo
Affiliation:
Dipartimento di Fisica, Unità G.N.S.M., Via Marzolo 8, 35131 Padova, Italy
S. Guerri
Affiliation:
Istituto La.M.El.-C.N.R., Via Castagnoli 1, 40126 Bologna, Italy,
R. Nipoti
Affiliation:
Istituto La.M.El.-C.N.R., Via Castagnoli 1, 40126 Bologna, Italy,
J. Siejka
Affiliation:
Groupe de Physique des Solides de 1'E.N.S., Université Paris VII, 2 Place Jussieu, 75221 Paris, France
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Abstract

The oxygen behaviour and its influence on the annealing properties of the TiO2/Si and Ti/TiO2/Si systems have been investigated. For the TiO2/Si system no reaction at all could be evidenced after vacuum annealing up to 900°C for 30'. In the Ti/TiO2/Si system metallic Ti reacts with the TiO2 film above 400°C and at 600°C a uniform oxygen solid solution at the solubility limit was obtained without any Si reaction. Silicide formation occurs for annealing temperatures higher than 650°C and causes oxygen expulsion from the reacted layer and consequently a rise in its concentration at the surface where Ti oxide precipitation takes place. This surface oxide layer prevents a further growth of the silicide up to 850°C. The reaction of the whole metal film is attained only by annealing at 900°C or above, when the oxide is completely reduced and an important oxygen loss takes place. A model explaining this behaviour is proposed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

1. Taubenblatt, M.A. and Helms, C.R., J. Appl. Phys. 53, 6308 (1982).CrossRefGoogle Scholar
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7. Berti, M., Drigo, A.V., Cohen, C., Siejka, J., Bentini, G.G., Nipoti, R. and Guerri, S., to be published in J. Appl.Phys.Google Scholar
8. Maissel, L.J. and Lang, R.G., “Handbook of Thin Film Technology”(Mc Graw-Hill, London 1970) pp. 172.Google Scholar

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