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Out Diffusion of Oxygen in Czochralski Silicon at Low Temperatures

Published online by Cambridge University Press:  10 February 2011

S.A. McQuaid
Affiliation:
MEMC Electronic Materials Inc., 501 Pearl Dr., PO Box 8, St. Peters, MO 63376smcquaid@memc.com
B.K. Johnson
Affiliation:
MEMC Electronic Materials Inc., 501 Pearl Dr., PO Box 8, St. Peters, MO 63376
D. Gambaro
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi 31, 1-28100 Novara, Italy
R. Falster
Affiliation:
MEMC Electronic Materials SpA, Viale Gherzi 31, 1-28100 Novara, Italy
M. Ashwin
Affiliation:
Semiconductor IRC, Imperial College, Prince Consort Rd., London SW7 2BZ, UK
R.C. Newman
Affiliation:
Semiconductor IRC, Imperial College, Prince Consort Rd., London SW7 2BZ, UK
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Abstract

Previously reported measurements of anomalously high rates of oxygen out-diffusion in Czochralski silicon at low temperatures (T≤450°C) are confirmed. The surface concentration is shown to decrease with increasing time while the depth to which the concentration is depleted remains constant. Exposure to a hydrogen plasma under conditions known to catalyse the diffusion of isolated oxygen atoms causes an increased rate of decrease of the surface concentration without significantly affecting the depth to which the concentration is depleted. The evolution of the out-diffusion profiles cannot be explained by a catalytic mechanism operating on the isolated oxygen atoms. A slow conversion of Oi to a complex containing oxygen which can diffuse rapidly over long distances before being trapped either on the surface or in the bulk of the sample can account for both out-diffusion and simultaneous loss of [Oi] in the bulk. The conversion rate is enhanced by exposure to a hydrogen plasma, indicating that it is controlled by the diffusion rate of isolated atoms.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Lee, S.-T., and Nichols, D., Mat. Res. Soc. Symp. Proc. 59 31 (1986).CrossRefGoogle Scholar
2. Mikkelsen, J.C. Jr, Mat. Res. Soc. Symp. Proc. 59 19 (1986).CrossRefGoogle Scholar
3. Lee, S.-T. and Fellinger, P., Appl.Phys.Lett. 49 1793 (1986).CrossRefGoogle Scholar
4. Lee, S.-T., Fellinger, P. and Chen, S., J.Appl.Phys. 63 1924 (1988).CrossRefGoogle Scholar
5. Gösele, U., Ahn, K.-Y., Marioton, B.P.R., Tan, T.Y. and Lee, S.-T., Appl. Phys. A48 219 (1989).CrossRefGoogle Scholar
6. Tokuda, Y., Katayama, M. and Hattori, T., Semicond.Sci.Technol. 8 163 (1993);CrossRefGoogle Scholar
7. Tokuda, Y., Shimokata, T., Katayama, M. and Hattori, T., Mater. Res. Soc. Proc. 262 75 (1992).CrossRefGoogle Scholar
7. Wijaranakula, W., J.Appl.Phys. 68 6538 (1990).CrossRefGoogle Scholar
8. McQuaid, S.A., Binns, M.J., Londos, C.A., Tucker, J.H., Brown, A.R. and Newman, R.C., J.Appl.Phys. 77 1427 (1995).CrossRefGoogle Scholar
9. Newman, R.C., Tucker, J.H., Brown, A.R. and McQuaid, S.A., J.Appl.Phys. 70 3061 (1991).CrossRefGoogle Scholar
10. Corbett, J.W., Watkins, G.D. and McDonald, R.S., Phys.Rev. 135, A1381 (1964)CrossRefGoogle Scholar

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