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The Origin Of The 0.78 eV Luminescence Band In Strained Layer SiGe/Si

Published online by Cambridge University Press:  10 February 2011

Anthony J. Kenyon
Affiliation:
Department of Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom.
Edward A. Steinman
Affiliation:
Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow District 142432, Russia.
Christopher W. Pitt
Affiliation:
Department of Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom.
David E. Hole
Affiliation:
Ion Implantation Laboratory, School of Engineering and I.T., University of Sussex, Falmer, Brighton, BN1 9QH, United Kingdom.
Vladimir I. Vdovin
Affiliation:
Institute for Chemical Problems of Microelectronics, B. Tolmachevsky per. 5, 109017 Moscow, Russia.
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Abstract

The photoluminescence band around 0.78 eV that is sometimes seen in strained layer SiGe samples or deformed silicon containing a high density of dislocations has been attributed to the presence of oxygen complexes. In this study we have prepared a set of Si0.9Ge0.1 samples by MBE which have then been implanted with iron, erbium, or oxygen in order to study the effect of implanted impurities on photoluminescence in the technologically important region around 1.5 microns.

Following implantation with oxygen, two luminescence bands appear around 0.85 eV and 0.78 eV, respectively. However, these bands are not present in either the unimplanted sample or those subject to Er or Fe implantation. The correlation between oxygen doping and the appearance of these bands supports the conjecture that they are associated with oxygen complexes.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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