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Orientation-Dependence of Low Temperature Epitaxial Silicon Growth

Published online by Cambridge University Press:  17 March 2011

Thomas A. Wagner
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Lars Oberbeck
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
Melanie Nerding
Affiliation:
Institute of Microcharacterisation, University of Erlangen, Cauerstr. 6, 91508 Erlangen, Germany
Horst P. Strunk
Affiliation:
Institute of Microcharacterisation, University of Erlangen, Cauerstr. 6, 91508 Erlangen, Germany
Ralf B. Bergmann
Affiliation:
Institute of Physical Electronics, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
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Abstract

Electronic properties of thin epitaxial silicon films deposited at temperatures below 650°C by means of ion-assisted deposition strongly depend on substrate orientation as well as on deposition temperature: In (100)-oriented epitaxial films we find a low density of structural defects, and the minority carrier diffusion length is only limited by the presence of point defects or point defect complexes. These investigations also show an improvement of the electronic quality with increasing deposition temperature. Epitaxy on non-(100)-oriented substrates results in a significantly higher density of structural defects. The electronic properties of films deposited on stable flat surfaces, such as (111)- and (113)-oriented substrates are inferior as compared to (100)-oriented films, but are still superior to those of films deposited on faceted surfaces, as shown by light beam induced current and electron back-scattering diffraction measurements of polycrystalline thin films.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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