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Organic Thin-Film Transistor Sensors: Interface Dependent and Gate Bias Enhanced Responses

Published online by Cambridge University Press:  01 February 2011

Maria C. Tanese
Affiliation:
Dipartimento di Chimica and Centro di Eccellenza TIRES - Università degli Studi di Bari Bari (Italy)
Daniel Fine
Affiliation:
University of Texas at Austin, Microelectronics Research Center, Austin, Texas (USA)
Ananth Dodabalapur
Affiliation:
University of Texas at Austin, Microelectronics Research Center, Austin, Texas (USA)
Luisa Torsi
Affiliation:
Dipartimento di Chimica and Centro di Eccellenza TIRES - Università degli Studi di Bari Bari (Italy)
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Abstract

Organic Thin Film Transistors are a new class of sensors potentially capable of outperforming chemiresistors. They can be operated at room temperature, offer the advantage of remarkable response repeatability and can function as multi-parameter sensors. In this paper evidence of OTFT response dependence on important parameters such as the chemical nature of the organic semiconductor active layer and the gate-dielectric/organic-semiconductor interface are produced. A sizable response enhancement of an OTFT sensor operated in the enhancement mode is also presented indicating that an OTFT can in principle lead to a lower detection limit than a resistor-type sensor with the same organic semiconductor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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