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Ordered Ternary Alloys by Atomic Layer Epitaxy

Published online by Cambridge University Press:  28 February 2011

B.T. Mcdermott
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, 27695-7911
K.G. Reid
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, 27695-7911
A. Dip
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, 27695-7911
N.A. El-Masry
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, 27695-7911
S.M. Bed Air
Affiliation:
North Carolina State University, Electrical and Computer Engineering, Raleigh, North Carolina, 27695-7911
W. Duncan
Affiliation:
Texas Instruments, Central Research Laboratory, Dallas, Texas
X. Yin
Affiliation:
Brooklyn College of CUNY, Department of Physics, Brooklyn, New York, 11210
F.H. Pollak
Affiliation:
Brooklyn College of CUNY, Department of Physics, Brooklyn, New York, 11210
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Abstract

We report on the successful growth of GalnP on GaAs substrate by Atomic Layer Epitaxy using organometallic and hydride sources. Growth was achieved by sequential exposure of the substrate to TMGa, PH3, TEIn and PH3. X-ray diffraction showed compositional lattice-matching optimally at 550°C with arbitrary choices of the mole fractions of the precursors in the gas phase. TEM also confirmed the highest ordering at this growth temperature on (100) substrates. Uniformity was excellent using Atomic Layer Epitaxy. Growth on (111)A GaAs substrates produced no evidence of the ordered CuPt phase present on (100) substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

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