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Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers

Published online by Cambridge University Press:  01 February 2011

Yonah Cho
Affiliation:
Yonah_Cho@amat.com, AMAT, Front End Products Group, 974 E. Arques Ave. M/S 81249, Sunnyvale, CA, 94085, United States
Victor Moroz
Affiliation:
Victor.Moroz@synopsys.com, Synopsys, Inc., 700 East Middlefield Road, Mountain View, CA, 94043, United States
Nikolas Zographos
Affiliation:
Nikolas.Zographos@synopsys.com, Synopsys Switzerland LLC, Zurich, N/A, Switzerland
Sunderraj Thirupapuliyur
Affiliation:
Sunderraj_Thirupapuliyur@amat.com, Applied Materials, Inc., 974 E. Arques Ave., Sunnyvale, CA, 94085, United States
Lucien Date
Affiliation:
Lucien_Date@amat.com, Applied Materials, Inc., 974 E. Arques Ave., Sunnyvale, CA, 94085, United States
Robert Schreutelkamp
Affiliation:
Robert_Schreutelkamp@amat.com, Applied Materials, Inc., 974 E. Arques Ave., Sunnyvale, CA, 94085, United States
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Abstract

Experimental and simulated P and As dopant diffusion profiles in Si:C epi films containing high C (>1 atomic %) are presented. A new set of physical effects were incorporated to accurately model P or As diffusion in the presence of high level of C. Evolution of substitutional C (Csub) profile in the Si:C epi film through dopant implant and activation anneal was characterized by high-resolution x-ray diffraction (HRXRD) technique. Three-layer analysis was utilized to obtain non-uniform Csub profile. Dependency of Csub retention on anneal thermal budget is studied. It is shown the initial Csub in the epi layer is lost during dopant implantation and conventional spike anneal sequence. Use of advanced millisecond (ms) laser anneal resulted in near 100% Csub retention in P-implanted Si:C epi film without compromising junction depth. Measured Csub (by HRXRD) and total C (by SIMS) profiles are compared with the ones predicted by the newly developed compact modeling in this study.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

[1] Ang, K.-W. et al., “Enhanced Performance in 50 nm N-MOSFETs with Silicon-Carbon Source/Drain Regions,” IEDM Tech. Dig. p.1069 (2004).Google Scholar
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[4] Cho, et al., “Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers: Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal,” IEDM Tech. Dig., p.959 (2007)Google Scholar
[5] Ruecker, H. et al., “The impact of supersaturated carbon on transient enhanced diffusion,” Appl. Phys. Lett. 73, 1682 (1998)Google Scholar
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Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers
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Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers
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Optimization of Si:C Source and Drain Formed by Post-Epi Implant and Activation Anneal: Experimental and Theoretical Analysis of Dopant Diffusion and C Evolution in High-C Si:C Epi Layers
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