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Optimization of Optoelectronic Properties of a-SiC:H Films

Published online by Cambridge University Press:  01 January 1993

F. Demichelis
Affiliation:
Dept. Physics, Politecnico, Torino, Italy
G. Crovini
Affiliation:
Dept. Physics, Politecnico, Torino, Italy
C.F. Pirri
Affiliation:
Dept. Physics, Politecnico, Torino, Italy
E. Tresso
Affiliation:
Dept. Physics, Politecnico, Torino, Italy
R. Galloni
Affiliation:
LAMEL-CNR, Bologna, Italy
R. Rizzoli
Affiliation:
LAMEL-CNR, Bologna, Italy
C. Summonte
Affiliation:
LAMEL-CNR, Bologna, Italy
F. Zignani
Affiliation:
Dip. Chimica Appl. e Scienza Mat. Fac. Ingegneria, Bologna, Italy
G. Amato
Affiliation:
IEN Galileo Ferraris Torino, Italy
P. Rava
Affiliation:
Elettrorava, Savonera, Torino, Italy
A. Madan
Affiliation:
MVSystems Inc., Golden, Colorado.
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Abstract

Amorphous silicon carbide films have been deposited by PECVD in SiH4+CH4+H2 mixtures at different hydrogen dilutions. The optoelecuonic properties of the films have been measured by transmittance-reflectance spectroscopy, photothermal deflection spectroscopy and photo and dark electrical conductivity. Structural properties have been obtained by FTIR spectroscopy. It was found that high hydrogen dilution leads to materials of improved quality, p-i-n device structures have been deposited with intrinsic layers at different hydrogen dilution levels.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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