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Optical Studies of InP/GaAs/InP Single Strained Layers

Published online by Cambridge University Press:  25 February 2011

Dan Hessman
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Mats-Erik Pistol
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Janos Olajos
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Werner Seifert
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Xiao Liu
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
Lars Samuelson
Affiliation:
Department of Solid State Physics, Box 118, Lund University, S-22100 Lund, Sweden.
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Abstract

Single strained layers of GaAs grown on InP have been studied using different optical techniques. Absorption has been measured on these structure which are believed to be type II. The absorption is found to increase slowly close to the threshold and the spectral shape is very similar to photoluminescence excitation spectra. No sharp excitonic peaks were found. The absorption has been modelled using K.p-theory including strain and confinement. The agreement with experiments is good with respect to the shape of the spectra but differs a factor of three with respect to the magnitude of the absorption. The strain and composition of the samples have been measured by a combination of photoluminescence and Raman spectroscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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