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Optical Characterization of AlxGal-xsb/GaSb Epitaxial Layers

Published online by Cambridge University Press:  15 February 2011

S. Di Lernia
Affiliation:
INFM-Dipartimento di Fisica “A. Volta”, Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
M. Geddo
Affiliation:
INFM-Dipartimento di Fisica “A. Volta”, Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
G. Guizzetti
Affiliation:
INFM-Dipartimento di Fisica “A. Volta”, Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
M. Patrini
Affiliation:
INFM-Dipartimento di Fisica “A. Volta”, Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
A. Bosacchi
Affiliation:
Istituto CNR-MASPEC, Via Chiavari 18, I-43100 Parma, Italy
S. Franchi
Affiliation:
Istituto CNR-MASPEC, Via Chiavari 18, I-43100 Parma, Italy
R. Magnaninia
Affiliation:
Dipartimento di Fisica, UniversitA di Parma, Viale delle Scienze, I-43100 Parma, Italy
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Abstract

Spectroscopic ellipsometry from 1.4 to 5 eV was used to systematically characterize epitaxial heterostructures AlxGa1-xSb/GaSb for different x concentrations (x≤0.5). The structures were grown by MBE at temperatures and beam equivalent pressure ratios which optimize their lowtemperature photoluminescence properties. Complex dielectric functions of AlxGa1-xSb versus x were derived, for the first time, from the ellipsometric spectra after mathematically removing the oxide overlayer effects. The spectra were analyzed with their second energyderivatives in term of standard analytical lineshapes: in particular the El, E11 and E2 critical point energies, broadening and amplitude parameters were derived as a function of x. On this basis we verified that the energy-shift model is appropriate to interpolate for any x≤0.5, thus allowing a nondestructive optical diagnostic of layer thickness and composition of epitaxial heterostructures based on A1xGa1-xSb.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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