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Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology

Published online by Cambridge University Press:  17 March 2011

Stefan Zollner
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Atul Konkar
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Ran Liu
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Himansu Yapa
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Patricia F. Dryer
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Victoria A. Neeley
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Qianghua Xie
Affiliation:
Motorola Semiconductor Products Sector, Process and Materials Characterization Laboratory, MD M360, 2200 W. Broadway Road, Mesa, AZ 85202
Galina F. Grom
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Qingyuan Zhu
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Rishikesh Krishnan
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Philippe M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
Leonid V. Tsybeskov
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
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Abstract

Short-period superlattices consisting of nanocrystalline Si wells and amorphous SiO2 barriers were analyzed using various structural (transmission electron microscopy, atomic force microscopy, and x-ray diffraction) and optical (Raman scattering and spectroscopic ellipsometry) characterization techniques. We observe parallel layers containing polycrystalline Si wells, primarily with <111> orientation, and an interesting surface morphology due to sputtering damage. Raman spectra show a redshift and broadening due to finite-size effects. The ellipsometry data can be described using the effective medium approximation (since the superlattice period is much shorter than the wavelength of the optical excitation) or a superlattice approach based on the Fresnel equations with a polycrystalline Si dielectric function.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

1. Grom, G. F., Lockwood, D. J., McCaffrey, J. P., Labbe, H. J., Fauchet, P. M., White, B. Jr, Diener, J., Kovalev, D., Koch, F., and Tsybeskov, L., Nature 407, 358361 (2000).CrossRefGoogle Scholar
2. Richter, H., Wang, Z. P., and Ley, L., Solid State Commun. 39, 625629 (1981).CrossRefGoogle Scholar
3. Tompkins, H. G. and McGahan, W. A., Spectroscopic Ellipsometry and Reflectometry, (Wiley, 1999).Google Scholar
4. Zollner, S. and Apen, E., Characterization and Metrology for ULSI Technology 2000, (AIP, in press).Google Scholar

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Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology
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