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Optical and Electrical Properties of Heavily Carbon-Doped Gaas Fabricated by High-Energy Ion-Implantation

Published online by Cambridge University Press:  21 February 2011

Takayuki Shima
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Chiba University, 1–33 Yayoi, Inage, Chiba 263, JAPAN,
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Shinji Kimura
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Kentaro Harada
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Tokai University, 1117 Kitakaname, Hiratsuka 259–12, JAPAN,
Tsutomu Iida
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Masanori Kotani
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Science University of Tokyo, 2641 Yamazaki, Noda 278, JAPAN,
Akihumi Osawa
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Nippon Institute of Technology, 4–1 Gakuendai, Miyashiro, Minamisaitama 345, JAPAN
Hajime Shibata
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Akira Obara
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Kazuhiro Kudo
Affiliation:
Chiba University, 1–33 Yayoi, Inage, Chiba 263, JAPAN,
Kuniaki Tanaka
Affiliation:
Chiba University, 1–33 Yayoi, Inage, Chiba 263, JAPAN,
Eiichi Kobayashi
Affiliation:
Science University of Tokyo, 2641 Yamazaki, Noda 278, JAPAN,
Yasushi Hoshino
Affiliation:
Nippon Institute of Technology, 4–1 Gakuendai, Miyashiro, Minamisaitama 345, JAPAN
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Abstract

High-energy (400 keV) implantation of carbon (C) ions was made into LEC-GaAs substrates with C concentration ([C]) of 1019− 1022Cm−3. 2 K photoluminescence (PL) and Hall effect measurements indicated that activation rate of C in LEC GaAs is both optically and electrically extremely low even after furnace-annealing at 850 °C for 20 min. For [C] = 1×1022 cm−3, two novel strong emissions were obtained and PL measurements as a function of excitation power and sample temperature suggested that the two emissions one at 1.485 eV and the other at 1.305 eV should reflect the formation of a new alloy between GaAs and C. Dual implantation of C+ and Ga+ ions was carried out to improve the activation or substitution rate. We found that nearly 90% activation rate can be achieved for C dose of 2.2 × 1013 cm−2.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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