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Optical and Electrical Properties of Heavily Carbon-Doped Gaas Fabricated by High-Energy Ion-Implantation

Published online by Cambridge University Press:  21 February 2011

Takayuki Shima ,
Yunosuke Makita ,
Shinji Kimura ,
Kentaro Harada ,
Tsutomu Iida ,
Masanori Kotani ,
Akihumi Osawa ,
Hajime Shibata ,
Akira Obara  and
Kazuhiro Kudo
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Takayuki Shima
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Chiba University, 1–33 Yayoi, Inage, Chiba 263, JAPAN,
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Shinji Kimura
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Kentaro Harada
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Tokai University, 1117 Kitakaname, Hiratsuka 259–12, JAPAN,
Tsutomu Iida
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Masanori Kotani
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Science University of Tokyo, 2641 Yamazaki, Noda 278, JAPAN,
Akihumi Osawa
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN, Nippon Institute of Technology, 4–1 Gakuendai, Miyashiro, Minamisaitama 345, JAPAN
Hajime Shibata
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Akira Obara
Affiliation:
Electrotechnical Laboratory, 1–1–4 Umezono, Tsukuba 305, JAPAN,
Kazuhiro Kudo
Affiliation:
Chiba University, 1–33 Yayoi, Inage, Chiba 263, JAPAN,
Kuniaki Tanaka
Affiliation:
Chiba University, 1–33 Yayoi, Inage, Chiba 263, JAPAN,
Eiichi Kobayashi
Affiliation:
Science University of Tokyo, 2641 Yamazaki, Noda 278, JAPAN,
Yasushi Hoshino
Affiliation:
Nippon Institute of Technology, 4–1 Gakuendai, Miyashiro, Minamisaitama 345, JAPAN
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Abstract

High-energy (400 keV) implantation of carbon (C) ions was made into LEC-GaAs substrates with C concentration ([C]) of 1019− 1022Cm−3. 2 K photoluminescence (PL) and Hall effect measurements indicated that activation rate of C in LEC GaAs is both optically and electrically extremely low even after furnace-annealing at 850 °C for 20 min. For [C] = 1×1022 cm−3, two novel strong emissions were obtained and PL measurements as a function of excitation power and sample temperature suggested that the two emissions one at 1.485 eV and the other at 1.305 eV should reflect the formation of a new alloy between GaAs and C. Dual implantation of C+ and Ga+ ions was carried out to improve the activation or substitution rate. We found that nearly 90% activation rate can be achieved for C dose of 2.2 × 1013 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 795
Copyright
Copyright © Materials Research Society 1996

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References

1 Kuech, T.F., Tischler, M.A., Wang, P.-J., Scilla, G., Potemski, R., and Cardone, F., Appl. Phys. Lett. 53, 1317(1988).Google Scholar
2 Abernathy, C.R., Pearton, S.J., Caruso, R., Ren, F., and Kovalchik, J., Appl. Phys Lett. 55, 1750(1989).Google Scholar
3 Madok, J.H., Haegel, N.M., Moll, A., Haller, E.E., and Yu, K.M., J. Appl. Phys. 75, 3829(1994).Google Scholar
4 van Berlo, W.H., J. Appl. Phys. 73, 2765(1993).Google Scholar
5 Lindhard, J., Scharff, M., and Schiott, H.E., Dans, K., Vidensk. Selsk. Matt.-Fys. Medd. 33, No.14(1963).Google Scholar
6 Shibata, H., Makita, Y., Mori, M., Nakayama, Y., Takahashi, T., Yamada, A.,Mayer, K.M., Ohnishi, N. and Beye, A.C., GaAs and related compounds (Institute of Physics, Bristol, 1989), p. 245.Google Scholar
7 Kawasumi, Y., Kimura, S., Iida, T., Obara, A., Shibata, H., Kobayashi, N., Tsukamoto, T. and Makita, Y., Nucl. Instr. and Meth. Section B, to be published.Google Scholar
8 Shen, H.-L., Makita, Y., Kimura, S., Tanoue, H., Yamada, A., Shibata, H., Obara, A. and Sakuragi, S., Appl. Phys. Lett. 65, 1427(1994).Google Scholar
9 Harada, K., Lo, B., Makita, Y., Beye, A.C., Halsall, M.P., Kimura, S., Kobayashi, N., Iida, T., Shima, T., Shibata, H., Obara, A., Matsumori, T., Appl. Phys. Lett., to be published.Google Scholar
10 Shigetomi, S., Makita, Y., Beye, A.C., Yamada, A., Ohnishi, N. and Matsumori, T., J. Appl. Phys. 69, 1613(1991).Google Scholar
11 Iida, T., Makita, Y., Kimura, S., Winter, S., Yamada, A. and Fons, P., J. Appl. Phys. 77, 146(1995).Google Scholar
12 Iida, T., Makita, Y., Kimura, S., Kawasumi, Y., Yamada, A., Uekusa, S. and Tsukamoto, T., J. Cryst. Growth, 150, 236(1995).Google Scholar
13 Noreika, A.J. and Francombe, M.H., J. Appl. Phys. 45, 3690 (1974).Google Scholar
14 Newman, K.E. and Dow, J.D., Phys. Rev. B 27, 7495(1983).Google Scholar
15 Barnett, S.A., Ray, M.A., Lastras, A., Kramer, B., Greene, J.E. and Raccaah, P.M., Electron. Lett. 18, 891(1982).Google Scholar
16 Shima, T., Kimura, S., Iida, T., Obara, A., Makita, Y., Kudo, K. and Tanaka, K., Nucl. Instr. and Meth. Section B, to be published.Google Scholar