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On the Role of the Staebler-WronSki Susceptibility in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  01 January 1993

D. Caputo
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. De Cesare
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. Irrera
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. Masini
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
F. Palma
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
M. C. Rossi
Affiliation:
Universitá "La Sapienza", Dip. Ingegneria Elettronica, via Eudossiana 18, 00185 Roma, ITALY
G. Conte
Affiliation:
ENEA, Centra Ricerche Fotovoltaiche, P.O. Box 32 , 80055 Portici (Napoli), ITALY
G. Nobile
Affiliation:
ENEA, Centra Ricerche Fotovoltaiche, P.O. Box 32 , 80055 Portici (Napoli), ITALY
E. Terzini
Affiliation:
ENEA, Centra Ricerche Fotovoltaiche, P.O. Box 32 , 80055 Portici (Napoli), ITALY
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Abstract

Photoconductivity decay during monochromatic illumination has been measured on an ensemble of a-Si:H films deposited at different substrate temperatures. Degradation behaviour has been modelled within the framework of the bond-breaking model (dN/dt = Csw np). Simmons and Taylor recombination kinetics has been assumed, taking into account the divalent nature of dangling bonds and their three possible conditions of occupancy. The Staebler-Wronski susceptibility (Csw) has been extracted through a fitting procedure. As a result, a correlation between the obtained Csw and the measured electronic, optical and structural properties of as deposited a-Si:H films can be inferred.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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