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On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon

Published online by Cambridge University Press:  26 February 2011

J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Kaniava
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Vilnius University, Sauletekio 10, 2054 Vilnius, Lithuania
M. Libezny
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
E. Simoen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Kissinger
Affiliation:
Institute of Semiconductor Physics, D-15204 Frankfurt (Oder), Germany
E. Gaubas
Affiliation:
Vilnius University, Sauletekio 10, 2054 Vilnius, Lithuania
C. Claeys
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
P. Clauws
Affiliation:
University of Gent, Krijgslaan 271 SI, B-9000 Gent, Belgium
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Abstract

The recombination activity of oxygen precipitation related lattice defects in p- and n-type silicon is studied with photoluminescence (PL) and microwave absorption (MWA) techniques. A direct correlation is observed between the amount of precipitated oxygen and the extended defect density on one hand and the minority carrier lifetime and PL activity on the other hand. The PL analyses show as dominant features in the spectra the Dl and D2 lines. The relative amplitude of the D-lines in the different samples is investigated as a function of the oxygen content, defect density and excitation level. The results are correlated with those of complementary techniques and are interrelated on the basis of Shockley-Read-Hall (SRH) theory.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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