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Ohmic Contacts to n-Type 6H-SiC Without Post-Annealing

Published online by Cambridge University Press:  15 February 2011

Tokuyuki Teraji ,
Shiro Hara ,
Hideyo Okushi  and
Koji Kajimura
Tokuyuki Teraji
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Shiro Hara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Hideyo Okushi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
Koji Kajimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305, Japan
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Abstract

We formed titanium Ohmic contacts to n-type 6H-SiC epitaxial layer byreducing the Schottky barrier heights. The barrier heights were reduced enough toform the Ohmic contacts by releasing the Fermi level from pinning through makingatomically-flat surfaces. The current transport by thermionic emission wasdominant at the Ti/SiC interface. Since the Ti contacts were formed without postannealing,surfaces of the Ti electrodes were flat and homogeneous maintaining asdepositedstructures. Contact resistivity was (6±1)×10−3 Ω-cm2, which is comparableto that of the annealed Ni contact formed on the SiC epitaxial layer with the samecarrier concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 149
Copyright
Copyright © Materials Research Society 1996

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