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Ohmic Contact Behavior of Pt/Ni/Au to p-ZnO

Published online by Cambridge University Press:  01 February 2011

Ji-Myon Lee
Affiliation:
jimlee@sunchon.ac.kr, Sunchon National University, Materials Science and Metallurgical Engineering, 315 Maegok-dong, Sunchon, Chonnam, 540-742, Korea, Republic of, 82-61-750-3550
Kyoung-Kook Kim
Affiliation:
kyoung_kim@naver.com, AIST, Tsukuba, Ibaraki, 305-8568, Japan
Hitoshi Tampo
Affiliation:
tampo-21@aist.go.jp, AIST, Tsukuba, Ibaraki, 305-8568, Japan
Akimasa Yamada
Affiliation:
a.yamada@aist.go.jp, AIST, Tsukuba, Ibaraki, 305-8568, Japan
Shigeru Niki
Affiliation:
shigeru-niki@aist.go.jp, AIST, Tsukuba, Ibaraki, 305-8568, Japan
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Abstract

The electrical properties of single Pt (30 nm) and Pt (30 nm)/Ni (30nm)/Au(50nm) multilayer contacts on moderately doped p-ZnO (Na = 5.0 × 1017 /−3) were investigated. Although linear current-voltage characteristics were observed for all samples, a sample that was annealed for 1 min at a temperature above 500 °C resulted in an ohmic contact with good characteristics. The best ohmic contact to p-type ZnO was obtained using a Pt/Ni/Au multilayer contact that was annealed at 600 °C for 1 min under a N2 ambient, showing a specific contact resistance Rc of 1.97 × 10−5 Ω cm2. The fundamental mechanisms for the lower contact resistivity of Pt/Ni/Au contacts are discussed based on glancing angle x-ray diffraction results and Auger depth profile analysis of the multilayer alloying process. Furthermore, we fabricated a ZnO p-n homojunction using Pt/Ni/Au and Ti/Au as the p-type and n-type ohmic contact metal, respectively. The threshold voltage was determined to be about 3.7 V, comparable to the bandgap energy of ZnO.

Type
Research Article
Copyright
Copyright © Materials Research Society 2006

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Ohmic Contact Behavior of Pt/Ni/Au to p-ZnO
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