Skip to main content Accessibility help
×
Home
Hostname: page-component-55b6f6c457-5kt27 Total loading time: 0.145 Render date: 2021-09-27T01:06:53.064Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": true, "newCiteModal": false, "newCitedByModal": true, "newEcommerce": true, "newUsageEvents": true }

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films

Published online by Cambridge University Press:  31 January 2011

Jorj Ian Owen
Affiliation:
j.owen@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5-Photovoltaik, Jülich, Germany
Jürgen Hüpkes
Affiliation:
j.huepkes@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5-Photovoltaik, Jülich, Germany
Eerke Bunte
Affiliation:
e.bunte@fz-juelich.de, Forschungszentrum Jülich GmbH, IEF5-Photovoltaik, Jülich, Germany
Get access

Abstract

The transparent conducting oxide (TCO) ZnO:Al is often used as the window layer and a source of light trapping in thin-film silicon solar cells. Light scattering in sputtered zinc oxide is achieved by wet chemical etching, which results in craters distributed randomly over the ZnO surface. To gain a better understanding of the etching process on ZnO thin films, a method for atomic force microscope (AFM) realignment between etching steps is developed. Using this method, the evolution of the HCl etch on a polycrystalline ZnO thin-film is observed. Results showed that this observation method did not modify the etching behavior, nor did stopping and restarting the etching change the points of attack, indicating that the points of HCl attack are built into the films as they are grown. Additionally, we investigated the evolution of the HCl etch on a ZnO surface previously etched in KOH, and found that the etch sites for both the acidic and basic solution are identical. We conclude that “peculiar” defects, which induce accelerated etching, are built into the film during growth, and that these defects can extend part or all the way though the thin-film in a similar way as screw dislocations in single crystalline ZnO.

Type
Research Article
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Kluth, O. Rech, B. Houben, L. Wieder, S. Schöpe, G., Beneking, C. Wagner, H. Löffl, A., Schock, H.W. Thin Solid Films 351, 247 (1999).CrossRefGoogle Scholar
2 Owen, J. Son, M. S. Yoo, K. H., Ahn, B. D. Lee, S. Y. Appl. Phys. Lett. 90, 033512 (2007).CrossRefGoogle Scholar
3 Faÿ, S., Kroll, U. Bucher, C. Vallat-Sauvain, E., Shah, A. Sol. Energy Mater. & Sol. Cells 86, 385 (2005).CrossRefGoogle Scholar
4 Mariano, A. N. and Hanneman, R. E. J. Appl. Phys. 34, 384 (1963).CrossRefGoogle Scholar
5 Heiland, G. Kunstmann, P. Surf. Sci. 13, 72 (1969).CrossRefGoogle Scholar
6 Hüpkes, J., Müller, J., and Rech, B. in Transparent Conductive Zinc Oxide, edited by Ellmer, K. Klein, A. and Rech, B. (Springer, Berlin Heidelberg, 2008) p. 359.CrossRefGoogle Scholar
7 Berginski, M. Hüpkes, J., Schulte, M. Schöpe, G., Stiebig, H. Rech, B. Wuttig, M. J. Appl. Phys. 101, 1911 (2007).CrossRefGoogle Scholar
8 Su, M. Pan, Z. Dravid, V. P. J. Microsc. 216, 194 (2004).CrossRefGoogle Scholar

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *