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Observation of Asymmetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates

Published online by Cambridge University Press:  01 February 2011

Marcin Zielinski
Affiliation:
mzielinski@novasic.com, NOVASiC, R&D, CRHEA CNRS, rue Bernard Gregory, Valbonne, 06560, France
Marc Portail
Affiliation:
mpo@crhea.cnrs.fr, Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS, UPR10, rue Bernard Gregory, Valbonne, 06560, France
Thierry Chassagne
Affiliation:
tchassagne@novasic.com, NOVASiC, Savoie Technolac, Arche Bât.4, BP267, Le Bourget du Lac cedex, 73375, France
Slawomir Kret
Affiliation:
kret@ifpan.edu.pl, Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw, 02668, Poland
Maud Nemoz
Affiliation:
mn@crhea.cnrs.fr, Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS, UPR10, rue Bernard Gregory, Valbonne, 06560, France
Yvon Cordier
Affiliation:
yc@crhea.cnrs.fr, Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS, UPR10, rue Bernard Gregory, Valbonne, 06560, France
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Abstract

We present an experimental study of asymmetric wafer deformation for 3C-SiC layers grown on deliberately misorientated silicon substrates. An asymmetric curvature has been observed both on (100) and (111) oriented layers. In this work we focus on the (100) oriented samples. The curvature of the wafers is studied as a function of wafer thickness and offcut angle. We look for the correlations between the observed asymmetric strain relaxation and the layer morphology and microstructure. We claim that different defect pattern, measured along [110] and [1-10] direction can be at the origin of almost complete relaxation of mismatch strain along the offcut direction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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